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Showing items 211-221 of 221 (5 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:19:40Z |
Asymmetrical Write-Assist for Single-Ended SRAM Operation
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Lin, Jihi-Yu; Tu, Ming-Hsien; Tsai, Ming-Chien; Jou, Shyh-Jye; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:12:04Z |
FinFET SRAM Cell Optimization Considering Temporal Variability Due to NBTI/PBTI, Surface Orientation and Various Gate Dielectrics
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Hu, Vita Pi-Ho; Fan, Ming-Long; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:12:03Z |
Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based Approach
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Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Hsieh, Chien-Yu; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:10:57Z |
Optimal design of triple-gate devices for high-performance and low-power applications
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Chiang, Meng-Hsueh; Lin, Jeng-Nan; Kim, Keunwoo; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:10:02Z |
Selective Device Structure Scaling and Parasitics Engineering: A Way to Extend the Technology Roadmap
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Wei, Lan; Deng, Jie; Chang, Li-Wen; Kim, Keunwoo; Chuang, Ching-Te; Wong, H. -S. Philip |
| 國立交通大學 |
2014-12-08T15:09:50Z |
Design of Sub-90 nm Low-Power and Variation Tolerant PD/SOI SRAM Cell Based on Dynamic Stability Metrics
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Joshi, Rajiv V.; Mukhopadhyay, Saibal; Plass, Donald W.; Chan, Yuen H.; Chuang, Ching-Te; Tan, Yue |
| 國立交通大學 |
2014-12-08T15:09:22Z |
Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability
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Bansal, Aditya; Rao, Rahul; Kim, Jae-Joon; Zafar, Sufi; Stathis, James H.; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:08:46Z |
Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells-An Assessment Based on Analytical Solutions of Poisson's Equation
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Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:08:11Z |
TCAD/Physics-Based Analysis of High-Density Dual-BOX FD/SOI SRAM Cell With Improved Stability
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Kim, Keunwoo; Kuang, Jente B.; Gebara, Fadi H.; Ngo, Hung C.; Chuang, Ching-Te; Nowka, Kevin J. |
| 國立交通大學 |
2014-12-08T15:06:44Z |
Investigation of Cell Stability and Write Ability of FinFET Subthreshold SRAM Using Analytical SNM Model
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Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te |
| 國立交通大學 |
2014-12-08T15:06:27Z |
Single-Ended Subthreshold SRAM With Asymmetrical Write/Read-Assist
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Tu, Ming-Hsien; Lin, Jihi-Yu; Tsai, Ming-Chien; Jou, Shyh-Jye; Chuang, Ching-Te |
Showing items 211-221 of 221 (5 Page(s) Totally)
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