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Showing items 216-221 of 221  (5 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:09:50Z Design of Sub-90 nm Low-Power and Variation Tolerant PD/SOI SRAM Cell Based on Dynamic Stability Metrics Joshi, Rajiv V.; Mukhopadhyay, Saibal; Plass, Donald W.; Chan, Yuen H.; Chuang, Ching-Te; Tan, Yue
國立交通大學 2014-12-08T15:09:22Z Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability Bansal, Aditya; Rao, Rahul; Kim, Jae-Joon; Zafar, Sufi; Stathis, James H.; Chuang, Ching-Te
國立交通大學 2014-12-08T15:08:46Z Static Noise Margin of Ultrathin-Body SOI Subthreshold SRAM Cells-An Assessment Based on Analytical Solutions of Poisson's Equation Hu, Vita Pi-Ho; Wu, Yu-Sheng; Fan, Ming-Long; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:08:11Z TCAD/Physics-Based Analysis of High-Density Dual-BOX FD/SOI SRAM Cell With Improved Stability Kim, Keunwoo; Kuang, Jente B.; Gebara, Fadi H.; Ngo, Hung C.; Chuang, Ching-Te; Nowka, Kevin J.
國立交通大學 2014-12-08T15:06:44Z Investigation of Cell Stability and Write Ability of FinFET Subthreshold SRAM Using Analytical SNM Model Fan, Ming-Long; Wu, Yu-Sheng; Hu, Vita Pi-Ho; Su, Pin; Chuang, Ching-Te
國立交通大學 2014-12-08T15:06:27Z Single-Ended Subthreshold SRAM With Asymmetrical Write/Read-Assist Tu, Ming-Hsien; Lin, Jihi-Yu; Tsai, Ming-Chien; Jou, Shyh-Jye; Chuang, Ching-Te

Showing items 216-221 of 221  (5 Page(s) Totally)
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