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Showing items 1-44 of 44 (1 Page(s) Totally)
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| 國立成功大學 |
2012-08-10 |
基於模糊邏輯架構應用於VRLA電池內阻和開路電壓估測之研究
|
莊紘銘; Chuang, Hung-Ming |
| 國立成功大學 |
2007-03-08 |
Comprehensive study of a Pd-GaAs high electron mobility transistor (HEMT)-based hydrogen sensor
|
Hung, Ching-Wen; Lin, Han-Lien; Chen, Huey-Ing; Tsai, Yan-Ying; Lai, Po-Hsien; Fu, Ssu-I; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
Thermal-stability improvement of a sulfur-passivated InGaP/InGaAs/GaAs HFET
|
Lai, Po-Hsien; Fu, SSu-I; Tsai, Yan-Ying; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006-03 |
On a GaAs-based transistor-type hydrogen sensing detector with a Pd/Al0.24Ga0.76As metal-semiconductor Schottky gate
|
Tsai, Yan-Ying; Hung, Ching-Wen; Lin, Kun-Wei; Lai, Po-Hsien; Fu, SSu-I; Chuang, Hung-Ming; Chen, Huey-Ing; Liu, Wen-Chau |
| 國立成功大學 |
2006-01 |
Influences of sulfur passivation on temperature-dependent characteristics of an AlGaAs/InGaAs/GaAs PHEMT
|
Lai, Po-Hsien; Chen, Chun-Wei; Kao, Chung-I; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2006 |
Improved temperature-dependent characteristics of a sulfur-passivated AlGaAs/InGaAs/GaAs pseudomorphic high-electron-mobility transistor
|
Lai, Po-Hsien; Fu, Ssu-I; Tsai, Yan-Ying; Hung, Ching-Wen; Yen, Chih-Hung; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Comparative studies of InP/InGaAs single and double heterojunction bipolar transistors with a tunnelling emitter barrier structure
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Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Fu, Ssu-I; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Characteristics of a new camel-gate field effect transistor (CAMFET) with a composite channel structure
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Lai, Po-Hsien; Chuang, Hung-Ming; Tsai, Sheng-Fu; Kao, Chung-I; Chen, Horng-Rung; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-07 |
Comprehensive study of InGaP-AlxGa1-xAs-GaAs composite-emitter heterojunction bipolar transistors with different thickness of AlxGa1-xAs
|
Cheng, Shiou-Ying; Chen, Chun-Yuan; Chen, Jing-Yuh; Chuang, Hung-Ming; Yen, Chih-Hung; Liu, Wen-Chau |
| 國立成功大學 |
2004-06-04 |
高性能多晶矽、擴散層電阻與異質結構場效電晶體之研究
|
莊弘銘; Chuang, Hung-Ming |
| 國立成功大學 |
2004-06-04 |
高性能多晶矽、擴散層電阻與異質結構場效電晶體之研究
|
莊弘銘; Chuang, Hung-Ming |
| 國立成功大學 |
2004-06 |
Hydrogen sensing characteristics of Pd- and Pt-Al0.3Ga0.7As metal-semiconductor (MS) Schottky diodes
|
Cheng, Chin-Chuan; Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Hsu, Wei-His; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-05 |
New InP-InGaAsHBT with a superlattice-collector structure
|
Chen, Jing-Yuh; Guo, Der-Feng; Cheng, Shiou-Ying; Lee, Kuan-Ming; Chen, Chun-Yuan; Chuang, Hung-Ming; Fu, Ssu-Yi; Liu, Wen-Chau |
| 國立成功大學 |
2004-04 |
A double-barrier-emitter triangular-baffier optoelectronic switch
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Guo, Der-Feng; Chen, Jing-Yuh; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-04 |
Characteristics of a new BBOS with an AlGaAs-delta(n(+))-GaAs-InAlGaP collector structure
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Guo, Der-Feng; Chen, Jing-Yuh; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-03 |
Study of InGaP/InGaAs double delta-doped channel heterostructure field-effect transistors
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Chuang, Hung-Ming; Cheng, Shiou-Ying; Chen, Chun-Yuan; Liao, Xin-Da; Lai, Po-Hsien; Kao, Chung-I; Liu, Wen-Chau |
| 國立成功大學 |
2004-02 |
Characteristics of Pd/InGaP Schottky diodes hydrogen sensors
|
Lin, Kun-Wei; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Lu, Chun-Tsen; Cheng, Chin-Chuan; Liu, Wen-Chau |
| 國立成功大學 |
2004-01 |
Study of InGaP/InGaAs double doped channel heterostructure field-effect transistors (DDCHFETs)
|
Chuang, Hung-Ming; Cheng, Shiou-Ying; Lai, Po-Hsien; Liao, Xin-Da; Chen, Chun-Yuan; Yen, Chih-Hung; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2003-12 |
Investigation of hydrogen-sensing properties of Pd/AlGaAs-based Schottky diodes
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Tsai, Yan-Ying; Lin, Kun-Wei; Lu, Chun-Tsen; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Cheng, Chin-Chuan; Liu, Wen-Chau |
| 國立成功大學 |
2003-11 |
Comparative hydrogen sensing performances of Pd- and Pt-InGaP metal-oxide-semiconductor Schottky diodes
|
Tsai, Yan-Ying; Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2003-09-01 |
Characteristics of a new Pt/oxide/In0.49Ga0.51P hydrogen-sensing Schottky diode
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Lin, Kun-Wei; Chen, Huey-Ing; Cheng, Chin-Chuan; Chuang, Hung-Ming; Lu, Chun-Tsen; Liu, Wen-Chau |
| 國立成功大學 |
2003-08 |
Investigation of a new InGaP-InGaAs pseudomorphic double doped-channel heterostructure field-effect transistor (PDDCHFET)
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Chuang, Hung-Ming; Cheng, Shiou-Ying; Chen, Chun-Yuan; Liao, Xin-Da; Liu, Rong-Chau; Liu, Wen-Chau |
| 國立成功大學 |
2003-07-28 |
Anomalous temperature-dependent characteristics of silicon diffused resistors
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Chuang, Hung-Ming; Tsai, Sheng-Fu; Thei, K. B.; Liu, Wen-Chau |
| 國立成功大學 |
2003-07 |
A hydrogen sensing Pd/InGaP metal-semiconductor (MS) Schottky diode hydrogen sensor
|
Lin, Kun-Wei; Chen, Huey-Ing; Lu, Chun-Tsen; Tsai, Yan-Ying; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2003-06-26 |
InGaP/InGaAs double delta-doped channel transistor
|
Chuang, Hung-Ming; Cheng, S .Y.; Liao, X. D.; Chen, C. Y.; Liu, Wen-Chau |
| 國立成功大學 |
2003-06 |
A new Pd-oxide-Al0.3Ga0.7As MOS hydrogen sensor
|
Lu, Chun-Tsen; Lin, Kun-Wei; Chen, Huey-Ing; Chuang, Hung-Ming; Chen, Chun-Yuan; Liu, Wen-Chau |
| 國立成功大學 |
2003-05 |
Temperature-dependent characteristics of polysilicon and diffused resistors
|
Chuang, Hung-Ming; Thei, K. B.; Tsai, Sheng-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2003-04-29 |
A new and improved structure of polysilicon resistor for subquarter micrometer CMOS device applications
|
Thei, Kong-Beng; Cheng, Chung-Long; Lin, Hsin-Chien; Chang, Tong-Sen; Tsai, Nun-Sian; Lee, Kuo-Hwa; Chuang, Hung-Ming; Tsai, Sheng-Fu; Liu, Wen-Chau |
| 國立成功大學 |
2003-04 |
A comprehensive study of polysilicon resistors for CMOS ULSI applications
|
Chuang, Hung-Ming; Thei, Kong-Beng; Tsai, Sheng-Fu; Lu, Chun-Tsen; Liao, Xin-Da; Lee, Kuan-Ming; Chen, Hon-Rung; Liu, Wen-Chau |
| 國立成功大學 |
2003-04 |
Dc characterization of an InP-InGaAs tunneling emitter bipolar transistor (TEBT)
|
Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Rong-Chau; Yen, Chih-Hung; Chen, Jing-Yuh; Cheng, Chin-Chuan;; Liu, Wen-Chau |
| 國立成功大學 |
2003-03 |
A novel InP/InGaAs TEBT for ultralow current operations
|
Chen, Chun-Yuan; Cheng, Shiou-Ying; Chiou, Wen-Hui; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2003-01 |
On the high-performance n(+)-GaAs/p(+)-InGaP/n-GaAs high-barrier gate camel-like HFETs
|
Wang, Chih-Kai; Yu, Kuo-Hui; Chiou, Wen-Hui; Chen, Chun-Yuan; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2003-01 |
Study on dc characteristics of an interesting InP/InGaAs tunneling-emitter bipolar transistor with double heterostructures
|
Chen, Chun-Yuan; Chiou, Wen-Huei; Yen, Chih-Hung; Chuang, Hung-Ming; Chen, Jing-Yuh; Cheng, Chin-Chuan; Liu, Wen-Chau |
| 國立成功大學 |
2003 |
InGaP/InGaAs/GaAs double channel pseudomorphic high electron mobility transistor
|
Chuang, Hung-Ming; Yu, Kuo-Hui; Lin, Kun-Wei; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-10 |
Improved temperature-dependent performances of a novel InGaP-InGaAs-GaAs double channel pseudomorphic high electron mobility transistor (DC-PHEMT)
|
Yu, Kuo-Hui; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Shiou-Ying; Cheng, Chin-Chuan; Chen, Jing-Yuh; Liu, Wen-Chau |
| 國立成功大學 |
2002-10 |
Comparative study of double ion implant Ti-salicide and pre-amorphization implant Co-salicide for ultra-large-scale integration applications
|
Chuang, Hung-Ming; Thei, Kong-Beng; Tsai, Sheng-Fu; Lu, Chun-Tsen; Liao, Xin-Da; Lee, Kuan-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2002-09 |
A comparative study of GaAs- and InP-based superlattice emitter resonant tunneling bipolar transistors (SE-RTBT's)
|
Chen, Chun-Yuan; Wang, Wei-Chou; Chiou, Wen-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Cheng, Shiou-Ying; Liu, Wen-Chau |
| 國立成功大學 |
2002-06 |
Effects of electrical and temperature stress on polysilicon resistors for CMOS technology applications
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Thei, Kong-Beng; Chuang, Hung-Ming; Tsai, Sheng-Fu; Lu, Chun-Tsen; Liao, Xin-Da; Lee, Kuan-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2002-03 |
On the high-performance Ti-salicide ULSI CMOS devices prepared by a borderless contact technique and double-implant structure
|
Thei, Kong-Beng; Chuang, Hung-Ming; Yu, Kuo-Hui; Liu, Wen-Chau; Liu, Rong-Chau; Lin, Kun-Wei; Su, Chi-Wen; Ho, Chin-Shiung; Wuu, Shou-Gwo; Wang, Chung-Shu |
| 國立成功大學 |
2002-01 |
Characterization of InP/InGaAs double-heterojunction bipolar transistors with tunnelling barriers and composite collector structures
|
Chiou, Wen-Huei; Pan, Hsi-Jen; Liu, Rong-Chau; Chen, Chun-Yuan; Wang, Chih-Kai; Chuang, Hung-Ming; Liu, Wen-Chau |
| 國立成功大學 |
2001-12 |
A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor
|
Lin, Kun-Wei; Cheng, Chin-Chuan; Cheng, Shiou-Ying; Yu, Kuo-Hui; Wang, Chih-Kai; Chuang, Hung-Ming; Chen, Jing-Yuh; Wu, Cheng-Zu; Liu, Wen-Chau |
| 國立成功大學 |
2001-08 |
MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations
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Liu, Wen-Chau; Yu, Kuo-Hui; Lin, Kun-Wei; Lin, Kuan-Po; Yen, Chih-Hung; Cheng, Chin-Chuan; Wang, C. K.; Chuang, Hung-Ming |
| 國立成功大學 |
2001-08 |
A novel double ion-implant (DII) Ti-salicide technology for high-performance sub-0.25-mu m CMOS devices applications
|
Thei, Kong-Beng; Liu, Wen-Chau; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Chin-Chuan; Ho, Chin-Hsiung; Su, Chi-Wen; Wuu, Shou-Gwo; Wang, Chung-Shu |
| 國立成功大學 |
2001-07 |
Characterization of polysilicon resistors in sub-0.25 mu m CMOS ULSI applications
|
Liu, Wen-Chau; Thei, Kong-Beng; Chuang, Hung-Ming; Lin, Kun-Wei; Cheng, Chin-Chuan; Ho, Yen-Shih; Su, Chi-Wen; Wong, Shyh-Chyi; Lin, Chih-Hsien; Diaz, C. H. |
Showing items 1-44 of 44 (1 Page(s) Totally)
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