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| 國立交通大學 |
2020-07-01T05:22:05Z |
Correlation between ferroelectricity and nitrogen incorporation of undoped hafnium dioxide thin films
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Luo, Jun-Dao; Yeh, Yun-Tien; Lai, Yu-Ying; Wu, Chia-Feng; Chung, Hao-Tung; Li, Yi-Shao; Chuang, Kai-Chi; Li, Wei-Shuo; Chen, Pin-Guang; Lee, Min-Hung; Cheng, Huang-Chung |
| 國立交通大學 |
2019-08-02T02:15:24Z |
Improvement of ferroelectric properties in undoped hafnium oxide thin films using thermal atomic layer deposition
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Luo, Jun-Dao; Zhang, He-Xin; Wang, Zheng-Ying; Gu, Siang-Sheng; Yeh, Yun-Tien; Chung, Hao-Tung; Chuang, Kai-Chi; Liao, Chan-Yu; Li, Wei-Shuo; Li, Yi-Shao; Li, Kai-Shin; Lee, Min-Hung; Cheng, Huang-Chung |
| 國立交通大學 |
2018-08-21T05:53:43Z |
Impact of AlOx layer on resistive switching characteristics and device-to-device uniformity of bilayered HfOx-based resistive random access memory devices
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Chuang, Kai-Chi; Chung, Hao-Tung; Chu, Chi-Yan; Luo, Jun-Dao; Li, Wei-Shuo; Li, Yi-Shao; Cheng, Huang-Chung |
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