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Taiwan Academic Institutional Repository >
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"chung ss"
Showing items 16-25 of 36 (4 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:27:09Z |
An accurate hot carrier reliability monitor for deep-submicron shallow S/D junction thin gate oxide n-MOSFET's
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Chung, SS; Chen, SJ; Yih, CM; Yang, WJ; Chao, TS |
| 國立交通大學 |
2014-12-08T15:26:55Z |
N-channel versus P-channel flash EEPROM - Which one has better reliabilities
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Chung, SS; Liaw, ST; Yih, CM; Ho, ZH; Lin, CJ; Kuo, DS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:26:48Z |
New experimental evidences of the plasma charging enhanced hot carrier effect and its impact on surface channel CMOS devices
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Chen, SJ; Lin, CC; Chung, SS; Lin, HC |
| 國立交通大學 |
2014-12-08T15:26:48Z |
A new physical and quantitative width dependent hot carrier model for shallow-trench-isolated CMOS devices
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Chung, SS; Chen, SJ; Yang, WJ; Yang, JJ |
| 國立交通大學 |
2014-12-08T15:26:32Z |
A novel and direct determination of the interface traps in sub-100nm CMOS devices with direct tunneling regime (12 similar to 16A) gate oxide
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Chung, SS; Chen, SJ; Yang, CK; Cheng, SM; Lin, SH; Sheng, YC; Lin, HS; Hung, KT; Wu, DY; Yew, TR; Chien, SC; Liou, FT; Wen, F |
| 國立交通大學 |
2014-12-08T15:26:27Z |
Localization of NBTI-induced oxide damage in direct tunneling regime gate oxide pMOSFET using a novel low gate-leakage gated-diode (L-2-GD) method
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Chung, SS; Lo, DK; Yang, JJ; Lin, TC |
| 國立交通大學 |
2014-12-08T15:26:23Z |
An improved interface characterization technique for a full-range profiling of oxide damage in ultra-thin gate oxide CMOS devices
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Chen, SJ; Lin, TC; Lo, DK; Yang, JJ; Chung, SS; Kao, TY; Shiue, RY; Wang, CJ; Peng, YK |
| 國立交通大學 |
2014-12-08T15:26:18Z |
A novel leakage current separation technique in a direct Tunneling regime gate oxide SONOS memory cell
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Chung, SS; Chiang, PY; Chou, G; Huang, CT; Chen, P; Chu, CH; Hsu, CCH |
| 國立交通大學 |
2014-12-08T15:26:10Z |
The performance and reliability enhancement of ETOX P-channel flash EEPROM cell with P-doped floating-gate
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Tsai, HW; Chiang, PY; Chung, SS; Kuo, DS; Liang, MS |
| 國立交通大學 |
2014-12-08T15:25:51Z |
The impact of STI induced reliabilities for scaled p-MOSFET in an advanced multiple oxide CMOS technology
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Chung, SS; Yeh, CH; Feng, SJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS |
Showing items 16-25 of 36 (4 Page(s) Totally)
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