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Institution Date Title Author
國立交通大學 2014-12-08T15:17:09Z Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stack Chung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS
國立交通大學 2014-12-08T15:03:20Z A NEW PROFILING TECHNIQUE FOR CHARACTERIZING HOT-CARRIER-INDUCED OXIDE DAMAGES IN LDD-N-MOSFETS LEE, GH; SU, JS; CHUNG, SS
國立交通大學 2014-12-08T15:02:55Z A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's Lee, RGH; Su, JS; Chung, SS
國立交通大學 2014-12-08T15:02:35Z An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's Lee, RGH; Wu, JP; Chung, SS
國立交通大學 2014-12-08T15:01:20Z A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions Cheng, SM; Yih, CM; Yeh, JC; Kuo, SN; Chung, SS
國家衛生研究院 2012-12 Sarcosine attenuates toluene-induced motor incoordination, memory impairment, and hypothermia but not brain stimulation reward enhancement in mice Chan, MH;Chung, SS;Stoker, AK;Markou, A;Chen, HH

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