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Showing items 31-36 of 36 (2 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:17:09Z |
Impact of STI on the reliability of narrow-width pMOSFETs with advanced ALD N/O gate stack
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Chung, SS; Yeh, CH; Feng, HJ; Lai, CS; Yang, JJ; Chen, CC; Jin, Y; Chen, SC; Liang, MS |
| 國立交通大學 |
2014-12-08T15:03:20Z |
A NEW PROFILING TECHNIQUE FOR CHARACTERIZING HOT-CARRIER-INDUCED OXIDE DAMAGES IN LDD-N-MOSFETS
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LEE, GH; SU, JS; CHUNG, SS |
| 國立交通大學 |
2014-12-08T15:02:55Z |
A new method for characterizing the spatial distributions of interface states and oxide-trapped charges in LDD n-MOSFET's
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Lee, RGH; Su, JS; Chung, SS |
| 國立交通大學 |
2014-12-08T15:02:35Z |
An efficient method for characterizing time-evolutional interface state and its correlation with the device degradation in LDD n-MOSFET's
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Lee, RGH; Wu, JP; Chung, SS |
| 國立交通大學 |
2014-12-08T15:01:20Z |
A unified approach to profiling the lateral distributions of both oxide charge and interface states in n-MOSFET's under various bias stress conditions
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Cheng, SM; Yih, CM; Yeh, JC; Kuo, SN; Chung, SS |
| 國家衛生研究院 |
2012-12 |
Sarcosine attenuates toluene-induced motor incoordination, memory impairment, and hypothermia but not brain stimulation reward enhancement in mice
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Chan, MH;Chung, SS;Stoker, AK;Markou, A;Chen, HH |
Showing items 31-36 of 36 (2 Page(s) Totally)
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