|
English
|
正體中文
|
简体中文
|
总笔数 :0
|
|
造访人次 :
51405416
在线人数 :
953
教育部委托研究计画 计画执行:国立台湾大学图书馆
|
|
|
"chung sss"的相关文件
显示项目 1-11 / 11 (共1页)
1
每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-08T15:43:30Z |
Quantitative investigation of hot carrier induced drain current degradation in submicron drain-engineered metal-oxide-semiconductor field-effect-transistors
|
Yang, JJ; Chung, SSS |
| 國立交通大學 |
2014-12-08T15:42:17Z |
Charge pumping profiling technique for the evaluation of plasma-charging-enhanced hot-carrier effect in short-N-channel metal-oxide-semiconductor field-effect transistors
|
Chen, SJ; Chung, SSS; Lin, HC |
| 國立交通大學 |
2014-12-08T15:05:53Z |
A CHARGE-BASED CAPACITANCE MODEL OF SHORT-CHANNEL MOSFETS
|
CHUNG, SSS |
| 國立交通大學 |
2014-12-08T15:05:46Z |
AN EFFICIENT SEMI-EMPIRICAL MODEL OF THE IV CHARACTERISTICS FOR LDD MOSFETS
|
CHUNG, SSS; LIN, TS; CHEN, YG |
| 國立交通大學 |
2014-12-08T15:05:36Z |
A COMPLETE MODEL OF THE IV CHARACTERISTICS FOR NARROW-GATE MOSFETS
|
CHUNG, SSS |
| 國立交通大學 |
2014-12-08T15:04:58Z |
AN ANALYTICAL THRESHOLD-VOLTAGE MODEL OF TRENCH-ISOLATED MOS DEVICES WITH NONUNIFORMLY DOPED SUBSTRATES
|
CHUNG, SSS; LI, TC |
| 國立交通大學 |
2014-12-08T15:04:35Z |
A UNIFIED 3-D MOBILITY MODEL FOR THE SIMULATION OF SUBMICRON MOS DEVICES
|
YANG, JJ; CHUNG, SSS; CHANG, CH; LEE, GH |
| 國立交通大學 |
2014-12-08T15:04:22Z |
A NEW APPROACH TO DETERMINE THE DRAIN-AND-SOURCE SERIES RESISTANCE OF LDD MOSFETS
|
CHUNG, SSS; LEE, JS |
| 國立交通大學 |
2014-12-08T15:04:13Z |
DIRECT OBSERVATION OF CHANNEL-DOPING-DEPENDENT REVERSE SHORT-CHANNEL EFFECT USING DECOUPLED C-V TECHNIQUE
|
GUO, JC; HSU, CCH; CHUNG, SSS |
| 國立交通大學 |
2014-12-08T15:03:47Z |
EFFECTS OF HOT-CARRIER-INDUCED INTERFACE STATE GENERATION IN SUBMICRON LDD MOSFETS
|
WANG, TH; HUANG, CM; CHOU, PC; CHUNG, SSS; CHANG, TE |
| 國立交通大學 |
2014-12-08T15:03:33Z |
TRANSCONDUCTANCE ENHANCEMENT DUE TO BACK BIAS FOR SUBMICRON NMOSFET
|
GUO, JC; CHANG, MC; LU, CY; HSU, CCH; CHUNG, SSS |
显示项目 1-11 / 11 (共1页)
1
每页显示[10|25|50]项目
|
