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"chung steve s"

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Showing items 121-130 of 136  (14 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2014-12-08T15:28:53Z The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors Hsieh, E. R.; Chung, Steve S.
國立交通大學 2014-12-08T15:28:09Z Extension of Moore's Law Via Strained Technologies-The Strategies and Challenges Chung, Steve S.
國立交通大學 2014-12-08T15:25:08Z Reliability issues for high performance nanoscale CMOS technologies with channel mobility enhancing schemes Chung, Steve S.
國立交通大學 2014-12-08T15:24:57Z New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyond Chung, Steve S.; Huang, D. C.; Tsai, Y. J.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.
國立交通大學 2014-12-08T15:24:57Z Understanding of the leakage components and its correlation to the oxide scaling on the SONOS cell endurance and retention Chen, C. H.; Chiang, P. Y.; Chung, Steve S.; Chen, Terry; Chou, George C. W.; Chu, C. H.
國立交通大學 2014-12-08T15:22:00Z A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise Measurement Lin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.
國立交通大學 2014-12-08T15:21:56Z Design of High-Performance and Highly Reliable nMOSFETs with Embedded Si:C S/D Extension Stressor(Si:C S/D-E) Chung, Steve S.; Hsieh, E. R.; Liu, P. W.; Chiang, W. T.; Tsai, S. H.; Tsai, T. L.; Huang, R. M.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W.
國立交通大學 2014-12-08T15:21:21Z A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic Regime Hsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.
國立交通大學 2014-12-08T15:20:29Z New Observations on the Physical Mechanism of Vth-Variation in Nanoscale CMOS Devices After Long Term Stress Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. W.
國立交通大學 2014-12-08T15:16:50Z The incremental frequency charge pumping method: Extending the CMOS ultra-thin gate oxide measurement down to 1nm Chung, Steve S.

Showing items 121-130 of 136  (14 Page(s) Totally)
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