|
"chung steve s"的相关文件
显示项目 101-125 / 136 (共6页)
<< < 1 2 3 4 5 6 > >>
每页显示[10|25|50]项目
| 國立交通大學 |
2014-12-12T01:55:13Z |
CMOS製程相容U型多重讀寫氮化矽快閃式記憶體之物理機制與可靠性探討
|
蔡政達; Tsai, Cheng-Ta; 莊紹勳; Chung, Steve S. |
| 國立交通大學 |
2014-12-12T01:55:06Z |
使用新的量測方法探討三面閘極金氧半電晶體 氧化層隨機陷阱造成之擾動效應
|
蔡漢旻; Tsai, Hanmin; 莊紹勳; Chung, Steve S. |
| 國立交通大學 |
2014-12-12T01:37:27Z |
決定高效能蕭特基金氧半場效應電晶體傳輸參數的新實驗方法
|
鄭士嵩; Cheng, Xhiz-Song; 莊紹勳; Chung, Steve S. |
| 國立交通大學 |
2014-12-12T01:37:18Z |
應變矽CMOS元件中隨機摻雜與隨機界面缺陷引起的臨界電壓變異度研究
|
程政穎; Cheng, Cheng-Ying; 莊紹勳; Chung, Steve-S. |
| 國立交通大學 |
2014-12-12T01:27:11Z |
二氧化鉿薄膜電阻式隨機存取記憶體之轉換機制及可靠度探討
|
王振鵬; Wang, Jen-Peng; 莊紹勳; Chung, Steve S. |
| 國立交通大學 |
2014-12-12T01:27:07Z |
隨機電報訊號量測於高閘極介電層N通道金氧半電晶體汲極電流波動之探討
|
張健宏; Chang, Chien-Hung; 莊紹勳; Chung, Steve S. |
| 國立交通大學 |
2014-12-12T01:27:03Z |
奈米級蕭特基金氧半場效電晶體之載子傳輸特性與通道背向散射研究
|
鄧安舜; Teng, An-Shun; 莊紹勳; Chung, Steve S. |
| 國立交通大學 |
2014-12-12T01:27:01Z |
隨機電報訊號量測法應用於前瞻CMOS元件應變技術引致的汲極電流不穩定性之研究
|
林米華; Lin, Mi-Hua; 莊紹勳; Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:48:21Z |
New Observation of an Abnormal Leakage Current in Advanced CMOS Devices with Short Channel Lengths Down to 50nm and Beyond
|
Hsieh, E. R.; Chung, Steve S.; Lin, Y. H.; Tsai, C. H.; Liu, P. W.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:47:46Z |
The investigation of charge loss mechanism in a two-bit wrapped-gate nitride storage nonvolatile memory
|
Ho, Y. H.; Chung, Steve S.; Chen, H. H. |
| 國立交通大學 |
2014-12-08T15:45:54Z |
The Observation of Trapping and Detrapping Effects in High-k Gate Dielectric MOSFETs by a New Gate Current Random Telegraph Noise (I(G)-RTN) Approach
|
Chang, C. M.; Chung, Steve S.; Hsieh, Y. S.; Cheng, L. W.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:45:53Z |
More Strain and Less Stress- The Guideline for Developing High-End Strained CMOS Technologies with Acceptable Reliability
|
Chung, Steve S.; Hsieh, E. R.; Huang, D. C.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:39:25Z |
The Understanding of Strain-Induced Device Degradation in Advanced MOSFETs with Process-Induced Strain Technology of 65nm Node and Beyond
|
Lin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:36:22Z |
The understanding of the drain-current fluctuation in a silicon-carbon source-drain strained n-channel metal-oxide-semiconductor field-effect transistors
|
Hsieh, E. R.; Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:33:48Z |
The Variability Issues in Small Scale Trigate CMOS Devices: Random Dopant and Trap Induced Fluctuations
|
Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:33:16Z |
Experimental Observation on the Random Dopant Fluctuation of Small Scale Trigate CMOS Devices
|
Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:32:43Z |
The Understanding of the Bulk Trigate MOSFET's Reliability Through the Manipulation of RTN Traps
|
Hsieh, E. R.; Wu, P. C.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T. |
| 國立交通大學 |
2014-12-08T15:32:12Z |
The Physical Insights Into an Abnormal Erratic Behavior in the Resistance Random Access Memory
|
Huang, Y. J.; Chung, Steve S.; Lee, H. Y.; Chen, Y. S.; Chen, F. T.; Gu, P. Y.; Tsai, M. -J. |
| 國立交通大學 |
2014-12-08T15:30:46Z |
The Understanding of Multi-level RTN in Trigate MOSFETs Through the 2D Profiling of Traps and Its Impact on SRAM Performance: A New Failure Mechanism Found
|
Hsieh, E. R.; Tsai, Y. L.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T. |
| 國立交通大學 |
2014-12-08T15:29:05Z |
Low Voltage and High Speed SONOS Flash Memory Technology: The Strategies and the Reliabilities
|
Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:28:53Z |
The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors
|
Hsieh, E. R.; Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:28:09Z |
Extension of Moore's Law Via Strained Technologies-The Strategies and Challenges
|
Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Reliability issues for high performance nanoscale CMOS technologies with channel mobility enhancing schemes
|
Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:24:57Z |
New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyond
|
Chung, Steve S.; Huang, D. C.; Tsai, Y. J.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:24:57Z |
Understanding of the leakage components and its correlation to the oxide scaling on the SONOS cell endurance and retention
|
Chen, C. H.; Chiang, P. Y.; Chung, Steve S.; Chen, Terry; Chou, George C. W.; Chu, C. H. |
显示项目 101-125 / 136 (共6页)
<< < 1 2 3 4 5 6 > >>
每页显示[10|25|50]项目
|
