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Institution Date Title Author
國立交通大學 2020-10-05T02:01:30Z A Novel Architecture to Build Ideal-linearity Neuromorphic Synapses on a Pure Logic FinFET Platform Featuring 2.5ns PGM-time and 10(12) Endurance Hsieh, E. R.; Chang, H. Y.; Chung, Steve S.; Chen, T. P.; Huang, S. A.; Chen, T. J.; Cheng, Osbert; Wong, S. Simon
國立交通大學 2020-10-05T02:01:30Z Embedded PUF on 14nm HKMG FinFET Platform: A Novel 2-bit-per-cell OTP-based Memory Feasible for IoT Secuirty Solution in 5G Era Hsieh, E. R.; Wang, H. W.; Liu, C. H.; Chung, Steve S.; Chen, T. P.; Huang, S. A.; Chen, T. J.; Cheng, Osbert
國立交通大學 2020-10-05T02:01:28Z Novel Concept of the Transistor Variation Directed Toward the Circuit Implementation of Physical Unclonable Function (PUF) and True-random-number Generator (TRNG) Xiao, Y.; Hsieh, E. R.; Chung, Steve S.; Chen, T. P.; Huang, S. A.; Chen, T. J.; Cheng, Osbert
國立交通大學 2020-10-05T02:00:30Z The Advances of OTP Memory for Embedded Applications in HKMG Generation and Beyond Chung, Steve S.
國立交通大學 2020-07-01T05:20:35Z The Demonstration of Gate Dielectric -fuse 4kb OTP Memory Feasible for Embedded Applications in High -k Metal-gate CMOS Generations and Beyond Hsieh, E. R.; Chang, C. W.; Chuang, C. C.; Chen, H. W.; Chung, Steve S.
國立交通大學 2020-01-02T00:03:27Z The Understanding of Gate Capacitance Matching on Achieving a High Performance NC MOSFET with Sufficient Mobility Chiang, C. K.; Husan, P.; Lou, Y. C.; Li, F. L.; Hsieh, E. R.; Liu, C. H.; Chung, Steve S.
國立交通大學 2019-10-05T00:09:43Z Embedded Resistive Switching Non-volatile Memory Technology for 28nm and Beyond High-k Metal-gate Generations Chung, Steve S.
國立交通大學 2019-09-02T07:45:40Z The Understanding of Breakdown Path in Both High-k Metal-Gate CMOS and Resistance RAM by the RTN Measurement Chung, Steve S.
國立交通大學 2019-06-03T01:09:17Z An Energy Efficient FinFET-based Field Programmable Synapse Array (FPSA) Feasible for One-shot Learning on EDGE AI Kuo, J. L.; Chen, H. W.; Hsieh, E. R.; Chung, Steve S.; Chen, T. P.; Huang, S. A.; Chen, T. J.; Cheng, Osbert
國立交通大學 2019-04-02T06:04:38Z Nonvolatile Crossbar 2D2R TCAM with Cell Size of 16.3 F-2 and K-means Clustering for Power Reduction Zhou, Keji; Xue, Xiaoyong; Yang, Jianguo; Xu, Xiaoxin; Lv, Hangbing; Wang, Mingyu; Jing, Ming'e; Liu, Wenjun; Zeng, Xiaoyang; Chung, Steve S.; Li, Jing; Liu, Ming

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