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"chung steve s"的相关文件
显示项目 121-130 / 136 (共14页)
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| 國立交通大學 |
2014-12-08T15:28:53Z |
The mechanisms of random trap fluctuation in metal oxide semiconductor field effect transistors
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Hsieh, E. R.; Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:28:09Z |
Extension of Moore's Law Via Strained Technologies-The Strategies and Challenges
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Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:25:08Z |
Reliability issues for high performance nanoscale CMOS technologies with channel mobility enhancing schemes
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Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:24:57Z |
New observations on the uniaxial and biaxial strain-induced hot carrier and NBTI Reliabilities for 65nm node CMOS devices and beyond
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Chung, Steve S.; Huang, D. C.; Tsai, Y. J.; Lai, C. S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:24:57Z |
Understanding of the leakage components and its correlation to the oxide scaling on the SONOS cell endurance and retention
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Chen, C. H.; Chiang, P. Y.; Chung, Steve S.; Chen, Terry; Chou, George C. W.; Chu, C. H. |
| 國立交通大學 |
2014-12-08T15:22:00Z |
A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise Measurement
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Lin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:21:56Z |
Design of High-Performance and Highly Reliable nMOSFETs with Embedded Si:C S/D Extension Stressor(Si:C S/D-E)
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Chung, Steve S.; Hsieh, E. R.; Liu, P. W.; Chiang, W. T.; Tsai, S. H.; Tsai, T. L.; Huang, R. M.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:21:21Z |
A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic Regime
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Hsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:20:29Z |
New Observations on the Physical Mechanism of Vth-Variation in Nanoscale CMOS Devices After Long Term Stress
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Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. W. |
| 國立交通大學 |
2014-12-08T15:16:50Z |
The incremental frequency charge pumping method: Extending the CMOS ultra-thin gate oxide measurement down to 1nm
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Chung, Steve S. |
显示项目 121-130 / 136 (共14页)
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