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"chung steve s"的相关文件
显示项目 126-136 / 136 (共3页)
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| 國立交通大學 |
2014-12-08T15:22:00Z |
A New Observation of Strain-Induced Slow Traps in Advanced CMOS Technology with Process-Induced Strain Using Random Telegraph Noise Measurement
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Lin, M. H.; Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:21:56Z |
Design of High-Performance and Highly Reliable nMOSFETs with Embedded Si:C S/D Extension Stressor(Si:C S/D-E)
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Chung, Steve S.; Hsieh, E. R.; Liu, P. W.; Chiang, W. T.; Tsai, S. H.; Tsai, T. L.; Huang, R. M.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:21:21Z |
A New and Simple Experimental Approach to Characterizing the Carrier Transport and Reliability of Strained CMOS Devices in the Quasi-Ballistic Regime
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Hsieh, E. R.; Chung, Steve S.; Liu, P. W.; Chiang, W. T.; Tsai, C. H.; Teng, W. Y.; Li, C. I.; Kuo, T. F.; Wang, Y. R.; Yang, C. L.; Tsai, C. T.; Ma, G. H. |
| 國立交通大學 |
2014-12-08T15:20:29Z |
New Observations on the Physical Mechanism of Vth-Variation in Nanoscale CMOS Devices After Long Term Stress
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Hsieh, E. R.; Chung, Steve S.; Tsai, C. H.; Huang, R. M.; Tsai, C. T.; Liang, C. W. |
| 國立交通大學 |
2014-12-08T15:16:50Z |
The incremental frequency charge pumping method: Extending the CMOS ultra-thin gate oxide measurement down to 1nm
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Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:10:38Z |
The investigation of capture/emission mechanism in high-k gate dielectric soft breakdown by gate current random telegraph noise approach
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Chung, Steve S.; Chang, C. M. |
| 國立交通大學 |
2014-12-08T15:10:03Z |
The channel backscattering characteristics of sub-100nm CMOS devices with different channel/substrate orientations
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Tsai, Y. J.; Chung, Steve S.; Liu, P. W.; Tsai, C. H.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:09:24Z |
Novel ultra-low voltage and high-speed programming/erasing schemes for SONOS flash memory with excellent data retention
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Chung, Steve S.; Tseng, Y. H.; Lai, C. S.; Hsu, Y. Y.; Ho, Eric; Chen, Terry; Peng, L. C.; Chu, C. H. |
| 國立交通大學 |
2014-12-08T15:07:36Z |
Technology roadmaps on the ballistic transport in strain engineered nanoscale CMOS devices
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Chung, Steve S.; Tsai, Y. J.; Tsai, C. H.; Liu, P. W.; Lin, Y. H.; Tsai, C. T.; Ma, G. H.; Chien, S. C.; Sun, S. W. |
| 國立交通大學 |
2014-12-08T15:07:17Z |
The proximity of the strain induced effect to improve the electron mobility in a silicon-carbon source-drain structure of n-channel metal-oxide-semiconductor field-effect transistors
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Hsieh, E. R.; Chung, Steve S. |
| 國立交通大學 |
2014-12-08T15:03:20Z |
The State-of-the-Art Mobility Enhancing Schemes for High-Performance Logic CMOS Technologies
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Chung, Steve S. |
显示项目 126-136 / 136 (共3页)
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