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Institution Date Title Author
國立交通大學 2020-10-05T02:01:57Z A Study of the Relationship Between Endurance and Retention Reliability for a HfOx-Based Resistive Switching Memory Chung, Wei-Min; Chang, Yao-Feng; Hsu, Yu-Lin; Chen, Y. -C. Daphne; Lin, Chao-Cheng; Lin, Chang-Hsieh; Leu, Jihperng
國立交通大學 2020-07-01T05:22:12Z SiCxNy-based resistive and threshold switching by using single precursor plasma-enhanced atomic layer deposition Hsu, Yu-Lin; Chang, Yao-Feng; Chung, Wei-Min; Chen, Ying-Chen; Lin, Chao-Cheng; Leu, Jihperng

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