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| 國立成功大學 |
2015-01-22 |
氧空缺遷移對氧化鈦與氧化鉭非揮發性記憶體電阻轉換特性之影響
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鍾裕隆; Chung, Yu-Lung |
| 國立成功大學 |
2015-01-06 |
氧空缺遷移對氧化鈦與氧化鉭非揮發性記憶體電阻轉換特性之影響
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鍾裕隆; Chung, Yu-Lung |
| 國立成功大學 |
2014-10-28 |
Joint contributions of Ag ions and oxygen vacancies to conducting filament evolution of Ag/TaOx/Pt memory device
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Chung, Yu-Lung; Cheng, Wen-Hui; Jeng, Jiann-Shing; Chen, Wei-Chih; Jhan, Sheng-An; Chen, Jen-Sue |
| 國立成功大學 |
2013-03-21 |
Revelation on the Interrelated Mechanism of Polarity-Dependent and Multilevel Resistive Switching in TaOx-Based Memory Devices
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Chen, Ying-Chuan; Chung, Yu-Lung; Chen, Bo-Tao; Chen, Wei-Chih; Chen, Jen-Sue |
| 國立臺灣大學 |
2012 |
金屬奈米結構之表面電漿子行為及其與氮化銦鎵/氮化鎵量子井耦合研究
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鍾育龍; Chung, Yu-Lung |
| 國立成功大學 |
2011-06 |
Schottky Barrier Mediated Single-Polarity Resistive Switching in Pt Layer-Included TiO(x) Memory Device
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Chung, Yu-Lung; Lai, Pei Ying; Chen, Ying-Chiuan; Chen, Jen-Sue |
Showing items 1-6 of 6 (1 Page(s) Totally)
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