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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:04:02Z |
EFFECT OF GE CONCENTRATION ON STATIC AND MICROWAVE PERFORMANCES IN GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
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CHYAN, YF; SZE, SM; CHANG, CY; REIF, R |
| 國立交通大學 |
2014-12-08T15:04:01Z |
EFFECT OF INTERFACIAL OXIDE ON STATIC AND HIGH-FREQUENCY PERFORMANCE IN POLYEMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
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CHYAN, YF; SZE, SM; CHANG, CY; REIF, R |
| 國立交通大學 |
2014-12-08T15:04:01Z |
TEMPERATURE INFLUENCE ON THE GENERALIZED EINSTEIN RELATION FOR DEGENERATE SEMICONDUCTORS WITH ARBITRARY BAND STRUCTURES
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CHYAN, YF; SZE, SM; CHANG, CY; LIAO, K; REIF, R |
| 國立交通大學 |
2014-12-08T15:03:51Z |
ANALYTICAL MODELING OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS UNDER HIGH-LEVEL INJECTION
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CHYAN, YF; CHANG, CY; SZE, SM; LIN, MJ; LIAO, K; REIF, R |
| 國立交通大學 |
2014-12-08T15:03:51Z |
HIGH-LEVEL INJECTION INFLUENCE ON THE HIGH-FREQUENCY PERFORMANCE OF POLYCRYSTALLINE SILICON EMITTER BIPOLAR-TRANSISTORS
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CHYAN, YF; SZE, SM; CHANG, CY; CHIUEH, HM; REIF, R |
Showing items 1-5 of 5 (1 Page(s) Totally)
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