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Showing items 1-15 of 15 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T14:56:28Z |
Passivation of GaSb using molecular beam epitaxy Y2O3 to achieve low interfacial trap density and high-performance self-aligned inversion-channel p-metal-oxide-semiconductor field-effect-transistors
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MINGHWEI HONG; Hong, M; Kwo, J; Chyi, JI; Brown, GJ; Lin, KY; Chen, KH; Hsueh, WJ; Chiang, TH; Chu, RL; Chu, RL;Chiang, TH;Hsueh, WJ;Chen, KH;Lin, KY;Brown, GJ;Chyi, JI;Kwo, J;Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:35Z |
Single-crystal GaN/Gd2O3/GaN heterostructure
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MINGHWEI HONG; Lee, CM; Chyi, JI; Anselm, KA; Cho, AY; Ng, HM; Kortan, AR; Mannaerts, JP; Chu, SNG; Kwo, J; Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
GaN/Gd2O3/GaN Single Crystal Heterostructure
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Hong, M;Kwo, J;Chu, SNG;Mannaerts, JP;Kortan, AR;Ng, HM;Cho, AY;Anselm, KA;Lee, CM;Chyi, JI; Hong, M; Kwo, J; Chu, SNG; Mannaerts, JP; Kortan, AR; Ng, HM; Cho, AY; Anselm, KA; Lee, CM; Chyi, JI; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:35Z |
Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Papers from the 18th North American Conference on Molecular Beam Epitaxy-Nitrides by MBE-Properties of Ga2O3 (Gd2O3)/GaN metal-insulator-semiconductor diodes
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Hong, M; Anselm, KA; Kwo, J; Ng, HM; Baillargeon, JN; Kortan, AR; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:28:33Z |
Insulator/GaN Heterostructures of Low Interfacial Density of States
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Hong, M; Ng, HM; Kwo, J; Kortan, AR; Baillargeon, JN; Anselm, KA; Mannaerts, JP; Cho, AY; Lee, CM; Chyi, JI; others; MINGHWEI HONG |
| 國立交通大學 |
2014-12-08T15:41:01Z |
Liquid phase deposited SiO2 on GaN
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Wu, HR; Lee, KW; Nian, TB; Chou, DW; Wu, JJH; Wang, YH; Houng, MP; Sze, PW; Su, YK; Chang, SJ; Ho, CH; Chiang, CI; Chern, YT; Juang, FS; Wen, TC; Lee, WI; Chyi, JI |
| 國立交通大學 |
2014-12-08T15:18:42Z |
Separated-transport-recombination p-i-n photodiode for high-speed and high-power performance
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Shi, JW; Hsu, HC; Huang, FH; Liu, WS; Chyi, JI; Lu, JY; Sun, CK; Pan, CL |
| 國立交通大學 |
2014-12-08T15:01:47Z |
Porous silicon light-emitting diode with tunable color
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Chen, YA; Chen, BF; Tsay, WC; Laih, LH; Chang, MN; Chyi, JI; Hong, JW; Chang, CY |
| 國家衛生研究院 |
2014-03 |
Investigation of C-terminal domain of SARS nucleocapsid protein - Duplex DNA interaction using transistors and binding-site models
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Hsu, YR;Kang, YW;Fang, JY;Lee, GY;Chyi, JI;Chang, Ck;Huang, CC;Hsu, CP;Huang, Th;Huang, YF;Sun, YC;Hsu, CH;Chen, CC;Sheng-Shian, L;Yeh, JA;Yao, DJ;Ren, F;Wang, YL |
| 國家衛生研究院 |
2013-11-28 |
Viscosity-dependent drain current noise of AlGaN/GaN high electron mobility transistor in polar liquids
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Fang, JY;Lee, GY;Chyi, JI;Hsu, CP;Kang, YW;Fang, KC;Kao, WL;Yao, DJ;Hsu, CH;Huang, YF;Chen, CC;Li, SS;Yeh, JA;Ren, F;Wang, YL |
| 國家衛生研究院 |
2013-05 |
Human immunodeficiency virus drug development assisted with AlGaN/GaN high electron mobility transistors and binding-site models
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Kang, YW;Lee, GY;Chyi, JI;Hsu, CP;Hsu, YR;Hsu, CH;Huang, YF;Sun, YC;Chen, CC;Chun Hung, S;Ren, F;Andrew Yeh, J;Wang, YL |
| 國家衛生研究院 |
2013-03 |
AlGaN/GaN high electron mobility transistors for protein-peptide binding affinity study
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Huang, CC;Lee, GY;Chyi, JI;Cheng, HT;Hsu, CP;Hsu, YR;Hsu, CH;Huang, YF;Sun, YC;Chen, CC;Li, SS;Andrew Yeh, J;Yao, DJ;Ren, F;Wang, YL |
| 國立臺灣大學 |
2004-04 |
Nanostructures and Carrier Localization Behaviors of Green-luminescence InGaN/GaN Quantum-well Structures of Various Silicon-doping Conditions
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Cheng, YC; Lin, EC; Wu, CM; Yang, CC; Yang, JR; Rosenauer, A; Ma, KJ; Shi, SC; Chen, LC; Pan, CC; Chyi, JI |
| 臺大學術典藏 |
2001 |
HCP single crystal rare earth oxides on GaN
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Lee, CM; Chyi, JI; MINGHWEI HONG; Kortan, AR; Kwo, J; Mannaerts, JP; Hong, M; Hong, M;Kortan, AR;Kwo, J;Mannaerts, JP;Lee, CM;Chyi, JI |
Showing items 1-15 of 15 (1 Page(s) Totally)
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