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"clarke r"的相关文件
显示项目 11-17 / 17 (共2页)
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| 臺大學術典藏 |
2018-09-10T04:31:29Z |
Direct determination of the stacking order in Gd ${$sub 2$}$ O ${$sub 3$}$ epi-layers on GaAs.
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Clarke, R; others; MINGHWEI HONG; Hong, M; MacHarrie, R; Pitney, J; Stern, E; Walko, D; Cross, J; Yacoby, Y;Sowwan, M;Pindak, R;Cross, J;Walko, D;Stern, E;Pitney, J;MacHarrie, R;Hong, M;Clarke, R;others; Yacoby, Y; Sowwan, M; Pindak, R |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
Direct atomic structure determination of epitaxially grown films: Gd 2 O 3 on GaAs (100)
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Sowwan, M;Yacoby, Y;Pitney, J;MacHarrie, R;Hong, M;Cross, J;Walko, DA;Clarke, R;Pindak, R;Stern, EA; Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:32Z |
Direct atomic structure determination of epitaxially grown films: Gd 2 O 3 on GaAs (100)
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Sowwan, M;Yacoby, Y;Pitney, J;MacHarrie, R;Hong, M;Cross, J;Walko, DA;Clarke, R;Pindak, R;Stern, EA; Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:30Z |
Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs (100)
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Sowwan, M;Yacoby, Y;Pitney, J;MacHarrie, R;Hong, M;Cross, J;Walko, DA;Clarke, R;Pindak, R;Stern, EA; Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:11:30Z |
Semiconductors II: Surfaces, interfaces, microstructures, and related topics-Direct atomic structure determination of epitaxially grown films: Gd2O3 on GaAs (100)
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Sowwan, M;Yacoby, Y;Pitney, J;MacHarrie, R;Hong, M;Cross, J;Walko, DA;Clarke, R;Pindak, R;Stern, EA; Sowwan, M; Yacoby, Y; Pitney, J; MacHarrie, R; Hong, M; Cross, J; Walko, DA; Clarke, R; Pindak, R; Stern, EA; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
Interfacial structure of epitaxial Gd_2O3 on GaAs (100) determined by novel analysis of Bragg rod measurements
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Clarke, R; Cross, JO; Stern, EA; MINGHWEI HONG; Dufresne, E; Yacoby, Y; Hong, M; Macharrie, RA; Pindak, R; Pitney, JA; Pitney, JA;Pindak, R;Macharrie, RA;Hong, M;Yacoby, Y;Dufresne, E;Clarke, R;Cross, JO;Stern, EA |
| 臺大學術典藏 |
2018-09-10T03:46:42Z |
Interfacial structure of epitaxial Gd_2O3 on GaAs (100) determined by novel analysis of Bragg rod measurements
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Clarke, R; Cross, JO; Stern, EA; MINGHWEI HONG; Dufresne, E; Yacoby, Y; Hong, M; Macharrie, RA; Pindak, R; Pitney, JA; Pitney, JA;Pindak, R;Macharrie, RA;Hong, M;Yacoby, Y;Dufresne, E;Clarke, R;Cross, JO;Stern, EA |
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