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| 國立成功大學 |
2014-12-07 |
Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors
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Kao, Kuo-Hsing; Verhulst, Anne S.; Rooyackers, Rita; Douhard, Bastien; Delmotte, Joris; Bender, Hugo; Richard, Olivier; Vandervorst, Wilfried; Simoen, Eddy; Hikavyy, Andriy; Loo, Roger; Arstila, Kai; Collaert, Nadine; Thean, Aaron; Heyns, Marc M.; De Meyer, Kristin |
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