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| 國立交通大學 |
2020-10-05T02:01:28Z |
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion
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Wang, Wei; Covi, Erika; Lin, Yu-Hsuan; Ambrosi, Elia; Ielmini, Daniele |
| 國立交通大學 |
2019-10-05T00:08:42Z |
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion-Part II: Compact Modeling
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Wang, Wei; Laudato, Mario; Ambrosi, Elia; Bricalli, Alessandro; Covi, Erika; Lin, Yu-Hsuan; Ielmini, Daniele |
| 國立交通大學 |
2019-10-05T00:08:42Z |
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling
|
Wang, Wei; Laudato, Mario; Ambrosi, Elia; Bricalli, Alessandro; Covi, Erika; Lin, Yu-Hsuan; Ielmini, Daniele |
Showing items 1-3 of 3 (1 Page(s) Totally)
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