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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-07-06T09:34:52Z |
An Inductorless Ka-Band SiGe HBT Ring Oscillator
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Kuo, Wei-Min Lance; Cressler, John D.; Chen, Yi-Jan Emery; Joseph, Alvin J.; Kuo, Wei-Min Lance; Cressler, John D.; Chen, Yi-Jan Emery; Joseph, Alvin J. |
| 國立臺灣大學 |
2005-10 |
An Inductorless Ka-Band SiGe HBT Ring Oscillator
|
Kuo, Wei-Min Lance; Cressler, John D.; Chen, Yi-Jan Emery; Joseph, Alvin J. |
| 國立臺灣大學 |
2005-04 |
Cryogenic Operation of Third-Generation, 200-GHz Peak-fT , Silicon–Germanium Heterojunction Bipolar Transistors
|
Banerjee, Bhaskar; Venkataraman, Sunitha; Lu, Yuan; Liang, Qingqing; Lee, Chang-Ho; Nuttinck, Sebastien; Heo, Dekhyuon; Chen, Emery Yi-Jan; Cressler, John D.; Laskar, Joy; Freeman, Greg; Ahlgren, David C. |
| 國立臺灣大學 |
2005 |
A compact 21 GHz inductorless differential quadrature ring oscillator implemented in SiGe HBT technology
|
Kuo, Wei-Min; Cressler, John-D.; Chen, Yi-Jan; Joseph, Alvin-J. |
| 國立臺灣大學 |
2005 |
Effects of Emitter Scaling and Device Biasing on Millimeter-Wave VCO Performance in 200 GHz SiGe HBT Technology
|
Kuo, Wei-Min Lance; Chen, Yi-Jan Emery; Cressler, John D.; Freeman, Greg |
Showing items 1-5 of 5 (1 Page(s) Totally)
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