臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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	2019臺灣學術機構典藏研討會
	機構典藏系統RC7版本已發佈

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Institution	Date	Title	Author
元智大學	Jul-22	Deep Trident Decomposition Network for Single License Plate Image Glare Removal	B. H. Chen; S. Ye; J. -L. Yin; H. -Y. Cheng; D. Chen
臺大學術典藏	2021-10-07T08:50:24Z	Alternate Air Bearing Slider Designs for Areal Density of 1 Tbit/in2	Jia-Yang Juang; D. Chen; D. B. Bogy; JIA-YANG JUANG
臺大學術典藏	2021-10-07T08:50:24Z	Alternate air bearing slider designs for areal density of 1 Tbit/in2	Jia-Yang Juang; D. Chen; D. B. Bogy; JIA-YANG JUANG
臺大學術典藏	2018-09-10T15:36:27Z	Using gallium-nitride cascode switching devices for common mode electromagnetic interference reduction in power converters/inverters	J.-Y. Lin; D. Chen; C.-W. Hung; Z. Huang; DAN CHEN
臺大學術典藏	2018-09-10T15:00:18Z	Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device	D. H. Lung;S. K. Hu;J. B. Kuo;D. Chen; D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T15:00:18Z	Parasitic BJT versus DIBL: Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device	D. H. Lung;S. K. Hu;J. B. Kuo;D. Chen; D. H. Lung; S. K. Hu; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T15:00:17Z	Back-Gate-Baias Induced Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device	S. K. Hu;D. H. Lung;J. B. Kuo;D. Chen; S. K. Hu; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T15:00:17Z	Back-Gate-Baias Induced Floating-Body-Related Subthreshold Characteristics of SOI NMOS Device	S. K. Hu;D. H. Lung;J. B. Kuo;D. Chen; S. K. Hu; D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:38Z	Using Offset Cancellation Circuit to Mitigate Beat-Frequency Oscillation of Phase Currents in a Multiphase Interleaved Voltage Regulator	C.-H. Chiu;C.-J. Chen;D. Chen;W.-H. Chang; C.-H. Chiu; C.-J. Chen; D. Chen; W.-H. Chang; DAN CHEN
臺大學術典藏	2018-09-10T09:50:38Z	Using Offset Cancellation Circuit to Mitigate Beat-Frequency Oscillation of Phase Currents in a Multiphase Interleaved Voltage Regulator	C.-H. Chiu;C.-J. Chen;D. Chen;W.-H. Chang; C.-H. Chiu; C.-J. Chen; D. Chen; W.-H. Chang; DAN CHEN
臺大學術典藏	2018-09-10T09:50:25Z	Function of the Upper/Lower Parasitic BJTs in 40nm PD SOI NMOS Device due to the Back-Gate Bias Effect	A. P. Chuang;S. I. Su;Z. H. Yang;J. B. Kuo;D. Chen;C. S. Yeh; A. P. Chuang; S. I. Su; Z. H. Yang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Function of the Upper/Lower Parasitic BJTs in 40nm PD SOI NMOS Device due to the Back-Gate Bias Effect	A. P. Chuang;S. I. Su;Z. H. Yang;J. B. Kuo;D. Chen;C. S. Yeh; A. P. Chuang; S. I. Su; Z. H. Yang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T09:50:25Z	Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect	D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
臺大學術典藏	2018-09-10T09:50:25Z	Turn-off Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect	D. H. Lung; J. B. Kuo; D. Chen; JAMES-B KUO; D. H. Lung;J. B. Kuo;D. Chen
臺大學術典藏	2018-09-10T09:25:08Z	Multi-Phase Power Converter and Control Circuit and Method Thereof,	C.-J. Chen;C.-S. Huang;K.-L. Tseng;D. Chen; C.-J. Chen; C.-S. Huang; K.-L. Tseng; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T09:25:08Z	Multi-Phase Power Converter and Control Circuit and Method Thereof,	C.-J. Chen;C.-S. Huang;K.-L. Tseng;D. Chen; C.-J. Chen; C.-S. Huang; K.-L. Tseng; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T09:24:48Z	Turn-off Transient Behavior of 40nm PD SOI NMOS Device Considering the Floating Body Effect	S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:43Z	A Novel Adaptive Precision Overpower Protection Scheme for Primary-Side Flyback Converters	P.-L. Huang; D. Chen; C.-J. Chen; Y.-M. Chen; DAN CHEN
臺大學術典藏	2018-09-10T08:46:42Z	An novel Adaptive High-Precision Overpower Protection Scheme for Primary-Side Controlled Flyback Converters	P.-L. Huang; D. Chen; C.-J. Chen; Y.-M. Chen; DAN CHEN; CHING-JAN CHEN
臺大學術典藏	2018-09-10T08:46:16Z	Modeling the Floating-Body-Effect-Related Transient Behavior of 40nm PD SOI NMOS Device via the SPICE Bipolar/MOS Model	S. W. Fang; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:46:15Z	Analysis of Turn-off Transient Behavior of the 40nm PD SOI NMOS Device with the Floating Body Effect	C. H. Chen; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:33Z	Digital compensation design method and digital compensation for a switching mode power supply	W.-H. Chang;D. Chen; W.-H. Chang; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T08:18:33Z	Digital compensation design method and digital compensation for a switching mode power supply	W.-H. Chang;D. Chen; W.-H. Chang; D. Chen; DAN CHEN
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO
臺大學術典藏	2018-09-10T08:18:06Z	Gate tunneling leakage current behavior of 40 nm PD SOI NMOS device considering the floating body effect	H. J. Hung;J. B. Kuo;D. Chen;C. S. Yeh; H. J. Hung; J. B. Kuo; D. Chen; C. S. Yeh; JAMES-B KUO

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