臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)

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Showing items 1-7 of 7 (1 Page(s) Totally)
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Institution	Date	Title	Author
元智大學	Mar-23	Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering	李清庭; Y. C. Weng; H. T. Hsu; Y. F. Tsao; D. Panda; H. Y. Huang; M. L. Kao; Y. P. Lan; E. Y. Chang
元智大學	Mar-23	Effects on RF Performance for AlGaN/GaN HEMT on Si Substrate with AlGaN Buffer Engineering	李清庭; Y. C. Weng; H. T. Hsu; Y. F. Tsao; D. Panda; H. Y. Huang; M. L. Kao; Y. P. Lan; E. Y. Chang
元智大學	Feb-23	Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications	李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications	李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator	李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Improved Off-State Leakage Current and Cutoff Frequency for AlGaN/GaN HEMT by Using Silicon-on-Insulator	李清庭; L. T. Hieu; H. T. Hsu; D. Panda; C. H. Lin; E. Y. Chang
元智大學	Feb-23	Effects of AlN/GaN superlattice buffer layer on performances of AlGaN/GaN HEMT grown on silicon for sub-6 GHz applications	李清庭; L. T. Hieu; H. T. Hsu; C. H. Chiang; D. Panda; C. H. Lin; E. Y. Chang

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