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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
臺大學術典藏 2018-09-10T04:58:46Z Large effective mass enhancement of the InAs1-xNx alloys in the dilute limit probed by Subnikov de-Haas oscillation D. R. Hang,; D. K. Shih,; C. F. Huang,; W. K. Hung,; Y. H. Chang,; Y. F. Chen,; H. H. Lin,; HAO-HSIUNG LIN; YANG-FANG CHEN
國立中山大學 2009 Growth and characterization of m-plane GaN-based layers on LiAlO2 (100) grown by MOVPE D.R. Hang;M.M.C. Chou;L. Chang;Y. Dikme;M. Heuken
國立中山大學 2009 Crystal growth of nonpolar m-plane ZnO on a lattice-matched (100) alpha-LiAlO2 substrate M.M.C. Chou;L.W. Chang;D.R. Hang;C.L. Chen;D.S. Chang;C.A. Li
國立中山大學 2003 Electrically detected and microwave-modulated Shubnikov-de Haas oscillations in an AlGaN/GaN heterostructure D.R. Hang;C.T. Liang;J.R. Juang;Tsai-Yu Huang;W.K. Hung;Y.F. Chen;Gil-Ho Kim;Jae-Hoon Lee;Jung-Hee Lee
國立中山大學 2002 Shubnikov-de Haas oscillations of two-dimensional electron gas in an InAsN/InGaAs single quantum well D.R. Hang;C.F. Huang;W.K. Hung;Y.H. Chang;J.C. Chen;H.C. Yang;Y.F. Chen;D.K. Shih;T.Y. Chu;H.H. Lin
國立中山大學 2001 AlXGa1-XN/GaN band offsets determined by deep-level emission D.R. Hang;C.H. Chen;Y.F. Chen;H.X. Jiang;J.Y. Lin
國立中山大學 2001 Effective mass of the two-dimesional electron gas in an Al0.2Ga0.8N/GaN heterojunction D.R. Hang;C.T. Liang;C.F. Huang;Y.H. Chang;Y.F. Chen;H.X. Jiang;J.Y. Lin
國立中山大學 1999 Positive and negative persistent photoconductivity in a two-side-doped In0.53Ga0.47As/In0.52Al0.48As quantum well D.R. Hang;Y.F. Chen;F.F. Fang;W.I. Wang

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