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Showing items 1-25 of 56 (3 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T05:59:14Z |
Charging damages to gate oxides in a helicon O-2 plasma
|
Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:49:04Z |
A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
|
Cheng, HC; Lin, W; Kang, TK; Perng, YC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:48:55Z |
Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
|
Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:46:11Z |
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
|
Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:08Z |
Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
|
Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:44:41Z |
Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
|
Chiu, SY; Shieh, JM; Chang, SC; Lin, KC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:43:56Z |
Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection
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Shieh, JM; Suen, SC; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:43:54Z |
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:39Z |
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
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Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:47Z |
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
|
Hsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
|
Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:28Z |
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
|
Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:21Z |
Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs
|
Tseng, CH; Chang, TK; Chu, FT; Shieh, JM; Dai, BT; Cheng, HC; Chin, A |
| 國立交通大學 |
2014-12-08T15:42:19Z |
Reduction of resistivity of electroplated copper by rapid thermal annealing
|
Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H-2 plasma treatment
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Shieh, JM; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Wetting effect on gap filling submicron damascene by an electrolyte free of levelers
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:42:09Z |
Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
|
Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:01Z |
The effect of plating current densities on self-annealing Behaviors of electroplated copper films
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:42:00Z |
Microleveling mechanisms and applications of electropolishing on planarization of copper metallization
|
Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Li, YH; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:49Z |
Leveling effects of copper electrolytes with hybrid-mode additives
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:41:48Z |
Investigation of carrying agents on microstructure of electroplated Cu films
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Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Investigations of pulse current electrodeposition for damascene copper metals
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Pattern effects on planarization efficiency of Cu electropolishing
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Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Improving the quality of electroplated copper films by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Superpolishing for planarizing copper damascene interconnects
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL |
Showing items 1-25 of 56 (3 Page(s) Totally)
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