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"dai bt"的相关文件
显示项目 1-50 / 56 (共2页)
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| 國立交通大學 |
2019-04-02T05:59:14Z |
Charging damages to gate oxides in a helicon O-2 plasma
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Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:49:04Z |
A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
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Cheng, HC; Lin, W; Kang, TK; Perng, YC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:48:55Z |
Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
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Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:46:11Z |
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
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Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:08Z |
Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
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Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:44:41Z |
Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
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Chiu, SY; Shieh, JM; Chang, SC; Lin, KC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:43:56Z |
Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection
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Shieh, JM; Suen, SC; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:43:54Z |
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:39Z |
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
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Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:47Z |
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
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Hsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:45Z |
The removal selectivity of titanium and aluminum in chemical mechanical planarization
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Hsu, JW; Chiu, SY; Wang, YL; Dai, BT; Tsai, MS; Feng, MS; Shih, HC |
| 國立交通大學 |
2014-12-08T15:42:28Z |
Electroplating copper in sub-100 nm gaps by additives with low consumption and diffusion ability
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:21Z |
Investigation of inductively coupled plasma gate oxide on low temperature polycrystalline-silicon TFTs
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Tseng, CH; Chang, TK; Chu, FT; Shieh, JM; Dai, BT; Cheng, HC; Chin, A |
| 國立交通大學 |
2014-12-08T15:42:19Z |
Reduction of resistivity of electroplated copper by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:15Z |
Reduction of etching plasma damage on low dielectric constant fluorinated amorphous carbon films by multiple H-2 plasma treatment
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Shieh, JM; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:42:14Z |
Wetting effect on gap filling submicron damascene by an electrolyte free of levelers
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:42:09Z |
Investigation of superfilling and electrical characteristics in low-impurity-incorporated Cu metallization
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Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:01Z |
The effect of plating current densities on self-annealing Behaviors of electroplated copper films
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:42:00Z |
Microleveling mechanisms and applications of electropolishing on planarization of copper metallization
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Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Li, YH; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:49Z |
Leveling effects of copper electrolytes with hybrid-mode additives
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Lin, KC; Shieh, JM; Chang, SC; Dai, BT; Chen, CF; Feng, MS; Li, YH |
| 國立交通大學 |
2014-12-08T15:41:48Z |
Investigation of carrying agents on microstructure of electroplated Cu films
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Shieh, JM; Chang, SC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:47Z |
Investigations of pulse current electrodeposition for damascene copper metals
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:39Z |
Pattern effects on planarization efficiency of Cu electropolishing
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Chang, SC; Shieh, JM; Huang, CC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:41:17Z |
Improving the quality of electroplated copper films by rapid thermal annealing
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:54Z |
Superpolishing for planarizing copper damascene interconnects
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Chang, SC; Shieh, JM; Dai, BT; Feng, MS; Li, YH; Shih, CH; Tsai, MH; Shue, SL; Liang, RS; Wang, YL |
| 國立交通大學 |
2014-12-08T15:40:06Z |
The application of electrochemical metrologies for investigating chemical mechanical polishing of Al with a Ti barrier layer
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Chiu, SY; Wang, YL; Liu, CP; Lan, JK; Ay, C; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:39:57Z |
Roles of copper mechanical characteristics in electropolishing
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Chang, SC; Shieh, JM; Fang, JY; Wang, YL; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:39:46Z |
Stable blue luminescence from mesoporous silica films
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Shieh, JM; Cho, AT; Lai, YF; Dai, BT; Pan, FM; Chao, KJ |
| 國立交通大學 |
2014-12-08T15:39:45Z |
Synthesis of microcrystalline silicon at room temperature using ICP
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Wu, JH; Shieh, JM; Dai, BT; Wu, YCS |
| 國立交通大學 |
2014-12-08T15:39:17Z |
The removal of airborne molecular contamination in cleanroom using PTFE and chemical filters
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Yeh, CF; Hsiao, CW; Lin, SJ; Hsieh, CM; Kusumi, T; Aomi, H; Kaneko, H; Dai, BT; Tsai, MS |
| 國立交通大學 |
2014-12-08T15:38:41Z |
Near-infrared femtosecond laser-induced crystallization of amorphous silicon
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Shieh, JM; Chen, ZH; Dai, BT; Wang, YC; Zaitsev, A; Pan, CL |
| 國立交通大學 |
2014-12-08T15:37:19Z |
Post-Cu CMP cleaning for colloidal silica abrasive removal
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Chen, PL; Chen, JH; Tsai, MS; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:36:01Z |
Pattern effect optimized with non-native surface passivation in copper abrasive-free polishing
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Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:36:01Z |
Emission of bright blue light from mesoporous silica with dense Si (Ge) nanocrystals
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Cho, AT; Shieh, JM; Shieh, J; Lai, YF; Dai, BT; Pan, FM; Kuo, HC; Lin, YC; Chao, KJ; Liu, PH |
| 國立交通大學 |
2014-12-08T15:36:00Z |
Two-additive electrolytes for superplanarizing damascene Cu metals
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Liu, SH; Shieh, JM; Chen, C; Dai, BT; Hensen, K; Cheng, SS |
| 國立交通大學 |
2014-12-08T15:27:11Z |
A study on electrochemical metrologies for evaluating the removal selectivity of AlCMP
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Chiu, SY; Hsu, JW; Tung, IC; Shih, HC; Feng, MS; Tsai, MS; Dai, BT |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Evaluation of impurity migration and microwave digestion methods for lithographic materials
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Ko, FH; Hsiao, LT; Chou, CT; Wang, MY; Wang, TK; Sun, YC; Cheng, BJ; Yeng, S; Dai, BT |
| 國立交通大學 |
2014-12-08T15:27:05Z |
Study on chemical-mechanical polishing of low dielectric constant polyimide thin films
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Tai, YL; Tsai, MS; Tung, IC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:26:56Z |
Film characterization and evaluation of process performance for the modified electron beam resist
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Ko, FH; Ting, JH; Chou, CT; Hsiao, LT; Huang, TY; Dai, BT |
| 國立交通大學 |
2014-12-08T15:26:56Z |
Technology of electroplating copper with low-K material a-C : F for 0.15 mu m damascene interconnection
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Shieh, JM; Suen, SC; Lin, KC; Chang, SC; Dai, BT; Chen, CF; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:43Z |
Effect of surface passivation removal on planarization efficiency in Cu abrasive-free polishing
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Fang, JY; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:35Z |
Study on pressure-independent Cu removal in Cu abrasive-free polishing
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Fang, JY; Huang, PW; Tsai, MS; Dai, BT; Wu, YS; Feng, MS |
| 國立交通大學 |
2014-12-08T15:17:03Z |
Dopant profile engineering by near-infrared femtosecond laser activation
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Wang, YC; Pan, CL; Shieh, JM; Dai, BT |
| 國立交通大學 |
2014-12-08T15:16:39Z |
Aging influence of poly(ethylene glycol) suppressors of Cu electrolytes on gaps filling
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Liu, SH; Li, TC; Chen, C; Shieh, JM; Dai, BT; Hensen, K; Cheng, SS |
| 國立交通大學 |
2014-12-08T15:03:25Z |
IMPROVEMENT OF THIN OXIDES THERMALLY GROWN ON THE REACTIVE-ION-ETCHED SILICON SUBSTRATES
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UENG, SY; WANG, PW; KANG, TK; CHAO, TS; CHEN, WH; DAI, BT; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:25Z |
EFFECTS OF POLYSILICON ELECTRON-CYCLOTRON-RESONANCE ETCHING ON ELECTRICAL CHARACTERISTICS OF GATE OXIDES
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KANG, TK; UENG, SY; DAI, BT; CHEN, LP; CHENG, HC |
| 國立交通大學 |
2014-12-08T15:03:11Z |
CHARACTERIZATION OF THE CHEMICAL-MECHANICAL POLISHING PROCESS-BASED ON NANOINDENTATION MEASUREMENT OF DIELECTRIC FILMS
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LIU, CW; DAI, BT; YEH, CF |
| 國立交通大學 |
2014-12-08T15:03:02Z |
Chemical mechanical polishing of PSG and BPSG dielectric films: The effect of phosphorus and boron concentration
|
Liu, CW; Dai, BT; Yeh, CF |
| 國立交通大學 |
2014-12-08T15:02:53Z |
Antenna charging effects on the electrical characteristics of polysilicon gate during electron cyclotron resonance etching
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Kang, TK; Ueng, SY; Dai, BT; Chen, LP; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:02:52Z |
Modeling of the wear mechanism during chemical-mechanical polishing
|
Liu, CW; Dai, BT; Tseng, WT; Yeh, CF |
显示项目 1-50 / 56 (共2页)
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