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| 國立交通大學 |
2019-04-02T05:59:14Z |
Charging damages to gate oxides in a helicon O-2 plasma
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Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:49:04Z |
A novel two-step etching to suppress the charging damages during metal etching employing helicon wave plasma
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Cheng, HC; Lin, W; Kang, TK; Perng, YC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:48:55Z |
Effects of helicon-wave-plasma etching on the charging damage of aluminum interconnects
|
Lin, W; Kang, TK; Perng, YC; Dai, BT; Cheng, HC |
| 國立交通大學 |
2014-12-08T15:46:11Z |
The novel improvement of low dielectric constant methylsilsesquioxane by N2O plasma treatment
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Chang, TC; Liu, PT; Mor, YS; Sze, SM; Yang, YL; Feng, MS; Pan, FM; Dai, BT; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:08Z |
Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing
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Hu, TC; Chiu, SY; Dai, BT; Tsai, MS; Tung, IC; Feng, MS |
| 國立交通大學 |
2014-12-08T15:44:41Z |
Characterization of additive systems for damascene Cu electroplating by the superfilling profile monitor
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Chiu, SY; Shieh, JM; Chang, SC; Lin, KC; Dai, BT |
| 國立交通大學 |
2014-12-08T15:43:56Z |
Characteristics of fluorinated amorphous carbon films and implementation of 0.15 mu m Cu/a-C : F damascene interconnection
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Shieh, JM; Suen, SC; Tsai, KC; Dai, BT; Wu, YC; Wu, YH |
| 國立交通大學 |
2014-12-08T15:43:54Z |
Investigations of effects of bias polarization and chemical parameters on morphology and filling capability of 130 nm damascene electroplated copper
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Chang, SC; Shieh, JM; Lin, KC; Dai, BT; Wang, TC; Chen, CF; Feng, MS; Li, YH; Lu, CP |
| 國立交通大學 |
2014-12-08T15:43:39Z |
Selective copper metallization by electrochemical contact displacement with amorphous silicon film
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Lee, YP; Tsai, MS; Hu, TC; Dai, BT; Feng, MS |
| 國立交通大學 |
2014-12-08T15:42:47Z |
Electrochemical behavior of copper chemical mechanical polishing in KIO3 slurry
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Hsu, JW; Chiu, SY; Tsai, MS; Dai, BT; Feng, MS; Shih, HC |
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