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"dalakyan a"
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| 國立交通大學 |
2014-12-08T15:25:15Z |
Direct experimental evidence of the hole capture by resonant levels in boron doped silicon
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Yen, ST; Tulupenko, V; Cheng, ES; Dalakyan, A; Lee, CP; Chao, KA; Belykh, V; Abramov, A; Ryzhkov, V |
| 國立成功大學 |
2008-03-31 |
Studies of ion irradiation effects in hydrogenated amorphous carbon thin films by X-ray absorption and photoemission spectroscopy
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Ray, S. C.; Kumar, K. P. Krishna; Tsai, H. M.; Chiou, J. W.; Pao, C. W.; Pong, Way-Faung; Tsai, M. H.; Wu, B. H.; Sheu, C. R.; Chen, C. C.; Hong, Franklin Chau-Nan; Cheng, H. H.; Dalakyan, A. |
| 淡江大學 |
2008-03 |
Studied of ion irradiation effects in hydrogenated amorphous carbon thin films by x-ray absorption and photoemission spectroscopy
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Ray, S. C.; Kumar Krishna, K. P.; Tsai, H. M.; Chiou, J. W.; Pao,C. W.; 彭維鋒; Pong, W. F.; Tsai, M.-H.; Wu, B.-H.; Sheu, C.-R.; Chen, C. C.; Hong, Franklin C.-N.; Cheng, H.-H.; Dalakyan, A. |
| 國立臺灣大學 |
2008-03 |
Studies of ion irradiation effects in hydrogenated amorphous carbon thin films by X-ray absorption and photoemission spectroscopy
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Ray, S. C.; Krishna Kumar, K. P.; Tsai, H. M.; Chiou, J. W.; Pao, C. W.; pomg, W. F.; Tsai, M. H.; H Wu, B.; Sheu, C. R.; Chen, C. C.; Hong, F. C. N.; Cheng, H. H.; Dalakyan, A. |
Showing items 1-4 of 4 (1 Page(s) Totally)
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