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Showing items 1-16 of 16 (1 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:01Z |
Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization
|
Chang, KM; Yeh, TH; Deng, IC |
| 國立交通大學 |
2019-04-02T05:59:47Z |
Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition
|
Chang, KM; Yeh, TH; Deng, IC; Shih, CW |
| 國立交通大學 |
2014-12-08T15:48:44Z |
The characteristics of chemical vapor deposited amorphous-like tungsten film as a gate electrode
|
Chang, KM; Deng, IC; Shih, CW; Lain, KD; Fu, CM |
| 國立交通大學 |
2014-12-08T15:46:52Z |
Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system
|
Chang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM |
| 國立交通大學 |
2014-12-08T15:46:27Z |
Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment
|
Chang, KM; Deng, IC; Yeh, TH; Shih, CW |
| 國立交通大學 |
2014-12-08T15:46:21Z |
Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film
|
Chang, KM; Deng, IC; Lin, HY |
| 國立交通大學 |
2014-12-08T15:45:58Z |
Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment
|
Chang, KM; Deng, IC; Yeh, SJ; Tsai, YP |
| 國立交通大學 |
2014-12-08T15:45:21Z |
Using NH3 plasma treatment to improve the characteristics of hydrogen silsesquioxane for copper interconnection application
|
Chang, KM; Deng, IC; Yeh, SJ; Tsai, YP |
| 國立交通大學 |
2014-12-08T15:45:15Z |
A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance
|
Chang, KM; Deng, IC; Tsai, YP; Wen, CY; Yeh, SJ; Wang, SW; Wang, JY |
| 國立交通大學 |
2014-12-08T15:43:15Z |
Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization
|
Chang, KM; Tseng, MH; Deng, IC; Tsai, YP; Yeh, SJ |
| 國立交通大學 |
2014-12-08T15:27:05Z |
Fabrication of cantilever type microswitches using surface micromachining technology
|
Chang, KM; Jou, CF; Luo, JJ; Kuo, LY; Deng, IC; Liang, C; Luhmann, NC |
| 國立交通大學 |
2014-12-08T15:27:04Z |
Suppress copper diffusion through barrier metal-free hydrogen silisequioxane dielectrics by using NH3 plasma treatment
|
Chang, KM; Deng, IC; Yeh, SJ; Yeh, TH |
| 國立交通大學 |
2014-12-08T15:16:06Z |
Study of a circularly polarized CPW-fed inductive square slot antenna
|
Deng, IC; Lin, RJ; Chang, KM; Chen, JB |
| 國立交通大學 |
2014-12-08T15:02:22Z |
Highly selective etching for polysilicon and etch-induced damage to gate oxide with halogen-bearing electron-cyclotron-resonance plasma
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Chang, KM; Yeh, TH; Deng, IC; Lin, HC |
| 國立交通大學 |
2014-12-08T15:01:50Z |
Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization
|
Chang, KM; Yeh, TH; Deng, IC |
| 國立交通大學 |
2014-12-08T15:01:32Z |
Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition
|
Chang, KM; Yeh, TH; Deng, IC; Shih, CW |
Showing items 1-16 of 16 (1 Page(s) Totally)
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