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臺灣學術機構典藏系統 (Taiwan Academic Institutional Repository, TAIR)
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Institution Date Title Author
國立交通大學 2019-04-02T06:00:01Z Nitridation of fine grain chemical vapor deposited tungsten film as diffusion barrier for aluminum metallization Chang, KM; Yeh, TH; Deng, IC
國立交通大學 2019-04-02T05:59:47Z Amorphouslike chemical vapor deposited tungsten diffusion barrier for copper metallization and effects of nitrogen addition Chang, KM; Yeh, TH; Deng, IC; Shih, CW
國立交通大學 2014-12-08T15:48:44Z The characteristics of chemical vapor deposited amorphous-like tungsten film as a gate electrode Chang, KM; Deng, IC; Shih, CW; Lain, KD; Fu, CM
國立交通大學 2014-12-08T15:46:52Z Thermal stability of amorphous-like WNx/W bilayered diffusion barrier for chemical vapor deposited-tungsten/p(+)-Si contact system Chang, KM; Deng, IC; Yeh, TH; Lain, KD; Fu, CM
國立交通大學 2014-12-08T15:46:27Z Barrier characteristics of chemical vapor deposited amorphous-like tungsten silicide with in situ nitrogen plasma treatment Chang, KM; Deng, IC; Yeh, TH; Shih, CW
國立交通大學 2014-12-08T15:46:21Z Suppression of fluorine penetration by use of in situ stacked chemical vapor deposited tungsten film Chang, KM; Deng, IC; Lin, HY
國立交通大學 2014-12-08T15:45:58Z Suppression of copper diffusion through barrier metal-free hydrogen silsesquioxane dielectrics by NH3 plasma treatment Chang, KM; Deng, IC; Yeh, SJ; Tsai, YP
國立交通大學 2014-12-08T15:45:21Z Using NH3 plasma treatment to improve the characteristics of hydrogen silsesquioxane for copper interconnection application Chang, KM; Deng, IC; Yeh, SJ; Tsai, YP
國立交通大學 2014-12-08T15:45:15Z A novel pretreatment technology for organic low-dielectric material to suppress copper diffusion and improve ashing resistance Chang, KM; Deng, IC; Tsai, YP; Wen, CY; Yeh, SJ; Wang, SW; Wang, JY
國立交通大學 2014-12-08T15:43:15Z Using NH3 plasma pretreatment to improve the characteristics of organic spin-on low-k materials for copper metallization Chang, KM; Tseng, MH; Deng, IC; Tsai, YP; Yeh, SJ

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