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Institution	Date	Title	Author
元智大學	2012-12-04	Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band	CHIA-HUA CHANG; Heng-Tung Hsu; Lu-Che Huang; Che-Yang Chiang; Edward Yi Chang
元智大學	2012-12-04	Impact of Bonding Temperature on the Performance of In0.6Ga0.4As Metamorphic High Electron Mobility Transistor (mHEMT) Device Packaged Using Flip-Chip-on-Board (FCOB) Technology	Che-Yang Chiang; Heng-Tung Hsu; Chien-I Kuo; Ching-Te Wang; Wee Chin Lim; Edward Yi Chang
元智大學	2012-12-04	Fabrication of AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Silicon Substrate with Slant Field Plates Using Deep-UV Lithography Featuring 5W/mm Power Density at X-band	CHIA-HUA CHANG; Heng-Tung Hsu; Lu-Che Huang; Che-Yang Chiang; Edward Yi Chang
元智大學	2012-05	Effect of Field Plate on the RF Performance of AlGaN/GaN HEMT Devices	Che-Yang Chiang; Heng-Tung Hsu; Edward Yi Chang
元智大學	2012-04-26	40nm InAs HEMTs with Current-Gain Cutoff Frequency of 663 GHz Biased Near the Occurrence of Impact Ionization	Chien-I Kuo ; Che-Yang Chiang; Heng-Tung Hsu; Ching-Yi Hsu; Guo-Wei Huang; Edward Yi Chang
元智大學	2012-04-26	40nm InAs HEMTs with Current-Gain Cutoff Frequency of 663 GHz Biased Near the Occurrence of Impact Ionization	Chien-I Kuo ; Che-Yang Chiang; Heng-Tung Hsu; Ching-Yi Hsu; Guo-Wei Huang; Edward Yi Chang
元智大學	2012-04-26	40nm InAs HEMTs with Current-Gain Cutoff Frequency of 663 GHz Biased Near the Occurrence of Impact Ionization	Chien-I Kuo ; Che-Yang Chiang; Heng-Tung Hsu; Ching-Yi Hsu; Guo-Wei Huang; Edward Yi Chang
元智大學	2011-10	V-Band Flip-Chip Assembled Gain Block Using In0.6Ga0.4As Metamorphic High-Electron-Mobility Transistor Technology	Che-Yang Chiang; Heng-Tung Hsu; Chin-Te Wang; Chien-I Kuo; Heng-Shou Hsu; Edward Yi Chang
元智大學	2011-09	Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate	Chin-Te Wang; Chien-I Kuo; Heng-Tung Hsu; Edward Yi Chang; Li-Han Hsu; Wee-Chin Lim; Yasuyuki Miyamoto
元智大學	2011-09	Flip-Chip Packaging of Low-Noise Metamorphic High Electron Mobility Transistors on Low-Cost Organic Substrate	Chin-Te Wang; Chien-I Kuo; Heng-Tung Hsu; Edward Yi Chang; Li-Han Hsu; Wee-Chin Lim; Yasuyuki Miyamoto
元智大學	2011-08-28	Dislocation Reduction by Double AlGaN Buffer Layers in GaN on Si Substrate	Yu-Lin Hsiao; Lung-Chi Lu; Yue-Han Wu; Chia-Ao Chang; Yu-Gong Chen; Jer-Shen Maa; Heng-Tung Hsu; Edward Yi Chang
元智大學	2011-08-28	Dislocation Reduction by Double AlGaN Buffer Layers in GaN on Si Substrate	Yu-Lin Hsiao; Lung-Chi Lu; Yue-Han Wu; Chia-Ao Chang; Yu-Gong Chen; Jer-Shen Maa; Heng-Tung Hsu; Edward Yi Chang
元智大學	2011-02	A Flip-Chip Packaged 80-nm In0.7Ga0.3As MHEMT for Millimeter-Wave Low-Noise Applications	Chin-Te Wang; Chien-I Kuo; Heng-Tung Hsu; Edward Yi Chang; Li-Han Hsu; Wee-Chin Lim; Che-Yang Chiang; Suz-Ping Tsai; Guo-Wei Huang
元智大學	2011-02	A Flip-Chip Packaged 80-nm In0.7Ga0.3As MHEMT for Millimeter-Wave Low-Noise Applications	Chin-Te Wang; Chien-I Kuo; Heng-Tung Hsu; Edward Yi Chang; Li-Han Hsu; Wee-Chin Lim; Che-Yang Chiang; Suz-Ping Tsai; Guo-Wei Huang
元智大學	2010-12	Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate	Chien-I Kuo; Wee-Chin Lim; Heng-Tung Hsu; Chin-Te Wang; Li-Han Hsu; Faiz Aizad; Guo-Wei Huang; Yasuyuki Miyamoto; Edward Yi Chang
元智大學	2010-12	Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate	Chien-I Kuo; Wee-Chin Lim; Heng-Tung Hsu; Chin-Te Wang; Li-Han Hsu; Faiz Aizad; Guo-Wei Huang; Yasuyuki Miyamoto; Edward Yi Chang
元智大學	2010-12	Bonding Temperature Effect on the Performance of Flip Chip Assembled 150nm mHEMT Device on Organic Substrate	Chien-I Kuo; Wee-Chin Lim; Heng-Tung Hsu; Chin-Te Wang; Li-Han Hsu; Faiz Aizad; Guo-Wei Huang; Yasuyuki Miyamoto; Edward Yi Chang
元智大學	2010-09	Evaluation of InAs-based HEMTs for Future Energy-Efficient and Logic Applications	Chien-I Kuo; Heng-Tung Hsu; Chin-Te Wang; Edward Yi Chang
元智大學	2010-09	Evaluation of InAs-based HEMTs for Future Energy-Efficient and Logic Applications	Chien-I Kuo; Heng-Tung Hsu; Chin-Te Wang; Edward Yi Chang
元智大學	2010-07	RF Performance Improvement of Metamorphic High-Electron Mobility Transistor Using (InxGa1−xAs)m/(InAs)n Superlattice-Channel Structure for Millimeter-Wave Applications	許恒通; Chien-I Kuo; Yu-Lin Chen; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Wen-Chung Tsern; Kartik Chandra Sahoo
元智大學	2010-05	Investigation Logic Performances of 80-nm HEMTs for InxGa1-xAs	許恒通; Faiz Aizad; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Guo-Wei Huang; Yu-Lin Chen; Yu-Sheng Chiu
元智大學	2010-05	Investigation Logic Performances of 80-nm HEMTs for InxGa1-xAs	許恒通; Faiz Aizad; Chien-I Kuo; Chien-Ying Wu; Edward Yi Chang; Yasuyuki Miyamoto; Guo-Wei Huang; Yu-Lin Chen; Yu-Sheng Chiu
元智大學	2010-04	An Al2O3 AlGaAs/InGaAs Metal-Oxide-Semiconductor PHEMT SPDT Switch with Low Control Currents for Wireless Communication Applications	許恒通; Yun-Chi Wu; Yueh-Chin Lin; Edward Yi Chang; C. T. Lee; Chi-Chung Kei; Chia-Ta Chang
元智大學	2010-02	30-GHz low-noise performance of 100-nm-gate-recessed n-GaN/AlGaN/GaN HEMTs	許恒通; Chia-Ta Chang; Edward Yi Chang; Chien-I Kuo; Jui-Chien Huang; C. Y. Lu; Y. Miyamoto
國立臺灣海洋大學	2010-02	Electrical Characterization and Transmission Electron Microscopy Assessment of Isolation of AlGaN/GaN High Electron Mobility Transistors with Oxygen Ion Implantation	Jin-Yu Shiu; Chung-Yu Lu; Ting-Yi Su; R. T. Huang; Herbert Zirath; Niklas Rorsman; Edward Yi Chang

Showing items 46-70 of 122 (5 Page(s) Totally)
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