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机构 日期 题名 作者
元智大學 2008-05 Metamorphic In0:53Ga0:47As Metal–Oxide–Semiconductor Structure on a GaAs Substrate with ZrO2 High-k Dielectrics 許恒通; Chien-I Kuo; Edward Yi Chang; Chun-Chi Chen; Chia-Yuan Chang
元智大學 2008-05 InAs channel-based quantum well transistors for high-speed and low-voltage digital applications 許恒通; Chien-I Kuo; Edward Yi Chang
元智大學 2008-05 InAs Quantum Well Transistors for High-Speed Low Power Applications 許恒通; Edward Yi Chang; Chien-I Kuo
元智大學 2008-05 Investigation of Impact Ionization from InxGa1-xAs to InAs Channel HEMTs for High Speed and Low Power Applications 許恒通; Chien-I Kuo; Edward Yi Chang; Chia-Ta Chang; Chia-Yuan Chang; Yasuyuki Miyamoto
元智大學 2008-05 Investigation of Impact Ionization from InxGa1-xAs to InAs Channel HEMTs for High Speed and Low Power Applications 許恒通; Chien-I Kuo; Edward Yi Chang; Chia-Ta Chang; Chia-Yuan Chang; Yasuyuki Miyamoto
元智大學 2008-05 InAs Quantum Well Transistors for High-Speed Low Power Applications 許恒通; Edward Yi Chang; Chien-I Kuo
元智大學 2008-05 Investigation of Impact Ionization from InxGa1-xAs to InAs Channel HEMTs for High Speed and Low Power Applications 許恒通; Chien-I Kuo; Edward Yi Chang; Chia-Ta Chang; Chia-Yuan Chang; Yasuyuki Miyamoto
元智大學 2008-04 RF and logic performance improvement of In0.7Ga0.3 As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology 許恒通; Chien-I Kuo; Edward Yi Chang; Chia-Yuan Chang; Yasuyuki Miyamoto; Suman Datta; Marko Radosavljevic; Guo-Wei Huang; Ching-Ting Lee
元智大學 2008-04 RF and logic performance improvement of In0.7Ga0.3 As/InAs/In0.7Ga0.3As composite-channel HEMT using gate-sinking technology 許恒通; Chien-I Kuo; Edward Yi Chang; Chia-Yuan Chang; Yasuyuki Miyamoto; Suman Datta; Marko Radosavljevic; Guo-Wei Huang; Ching-Ting Lee
元智大學 2007-12 High Performance InAs-Channel HEMT for Low Voltage Milimeter Wave Applications 許恒通; Chia-Yuan Chang; Edward Yi Chang; Chien-I Kuo; Yasuyuki Miyamoto

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