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"fowler burt"
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| 國立交通大學 |
2018-08-21T05:56:52Z |
A Universal Model for Interface-type Threshold Switching Phenomena by Comprehensive Study of Vanadium Oxide-Based Selector
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Lin, Chih-Yang; Chen, Ying-Chen; Gu, Meiqi; Pan, Chih-Hung; Jin, Fu-Yuan; Tseng, Yi-Ting; Hsieh, Cheng Chih; Wu, Xiaohan; Chen, Min-Chen; Chang, Yao-Feng; Zhou, Fei; Fowler, Burt; Chang, Kuan-Chang; Tsai, Tsung-Ming; Chang, Ting-Chang; Zhao, Yonggang; Sze, Simon M.; Banetjee, Sanjay; Lee, Jack C. |
| 國立交通大學 |
2017-04-21T06:48:34Z |
The Voltage-Triggered SET Mechanism and Self-Compliance Characteristics in Intrinsic Unipolar SiOx-Based Resistive Switching Memory
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Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Ji, Li; Zhou, Fei; Lee, Jack C. |
| 國立交通大學 |
2017-04-21T06:48:34Z |
Comprehensive Trap-Level Study in SiOx-based Resistive Switching Memory
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Chang, Yao-Feng; Chen, Ying-Chen; Li, Ji; Xue, Fei; Wang, Yanzhen; Zhou, Fei; Fowler, Burt; Lee, Jack C. |
| 國立交通大學 |
2017-04-21T06:48:33Z |
Resistive Switching of SiOX with One Diode-One Resistor Nanopillar Architecture Fabricated via Nanosphere Lithography
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Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C. |
| 國立交通大學 |
2014-12-08T15:35:06Z |
Integrated One Diode-One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
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Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M.; Yu, Edward T.; Lee, Jack C. |
Showing items 1-5 of 5 (1 Page(s) Totally)
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