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Showing items 1-22 of 22  (1 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2019-04-03T06:41:15Z Transparent electrode design for AlGaN deep-ultraviolet light-emitting diodes Hrong, Ray-Hua; Zeng, Yu-Yuan; Wang, Wei-Kai; Tsai, Chia-Lung; Fu, Yi-Keng; Kuo, Wei-Hung
國立交通大學 2014-12-08T15:35:24Z Nitride-Based Blue Light-Emitting Diodes Grown With InN/GaN Matrix Quantum Wells Kuo, Cheng-Huang; Fu, Yi Keng; Chang, L. C.; Chen, Yu An
國立交通大學 2014-12-08T15:31:58Z Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin
國立交通大學 2014-12-08T15:29:25Z Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang
國立交通大學 2014-12-08T15:26:40Z Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process Fu, Yi-Keng; Chen, Bo-Chun; Fang, Yen-Hsiang; Jiang, Ren-Hao; Lu, Yu-Hsuan; Xuan, Rong; Huang, Kai-Feng; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jebb-Fang; Chang, Chun-Yen
國立交通大學 2014-12-08T15:22:44Z High efficiency and output power of near-ultraviolet light-emitting diodes grown on GaN substrate with back-side etching Fang, Yen-Hsiang; Fu, Yi-Keng; Xuan, Rong
國立交通大學 2014-12-08T15:21:51Z Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chao, Chia-Hsin; Su, Yan-Kuin; Chen, Jenn-Fang
國立交通大學 2014-12-08T15:20:34Z Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers Chen, Bo-Chun; Chang, Chun-Yen; Fu, Yi-Keng; Huang, Kai-Feng; Lu, Yu-Hsuan; Su, Yan-Kuin
國立交通大學 2014-12-08T15:11:54Z The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy Fu, Yi-Keng; Jiang, Ren-Hao; Lu, Yu-Hsuan; Chen, Bo-Chun; Xuan, Rong; Fang, Yen-Hsiang; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jenn-Fang
國立成功大學 2014-05 Investigation of lattice-modulated AlInGaN as a barrier layer in near-ultraviolet light-emitting diodes by numerical analysis and fabrication Fu, Yi-Keng; Lu, Yu-Hsuan; Hsu, Chih-Hao; Chang, Hsiu-Mei; Su, Yan-Kuin
國立成功大學 2014-03-21 Tailoring of polarization in electron blocking layer for electron confinement and hole injection in ultraviolet light-emitting diodes Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Wang, Kang L.; Pilkuhn, Manfred H.; Chu, Mu-Tao
國立成功大學 2013-08 Light Improvement of Near Ultraviolet Light-Emitting Diodes by Utilizing Lattice-Matched InAlGaN as Barrier Layers in Active Region Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Xuan, Rong; Pilkuhn, Manfred H.; Chen, Ying-Chih
國立成功大學 2013-08 Suppression of Nonradiation Recombination by Selected Si Doping in AlGaN Barriers for Ultraviolet Light-Emitting Diodes Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Chen, Ying-Chih; Xuan, Rong; Pilkuhn, Manfred H.
國立成功大學 2013-08 Hole Injection and Electron Overflow Improvement in 365 nm Light-Emitting Diodes by Band-Engineering Electron Blocking Layer Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chen, Jenn-Fang; Su, Yan-Kuin
國立成功大學 2013-04-08 Efficiency enhancement in ultraviolet light-emitting diodes by manipulating polarization effect in electron blocking layer Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Xuan, Rong; Pilkuhn, Manfred H.
國立成功大學 2013-01 Effect of AlGaN Si-Doped Barrier Layer on Optical Properties of Ultraviolet Light-Emitting Diodes Lu, Yu-Hsuan; Fu, Yi-Keng; Huang, Shyh-Jer; Su, Yan-Kuin; Xuan, Rong; Pilkuhn, Manfred H.
國立成功大學 2012-05-15 Optical Simulation and Fabrication of Near-Ultraviolet LEDs on a Roughened Backside GaN Substrate Fu, Yi-Keng; Lu, Yu-Hsuan; Xuan, Rong; Chao, Chia-Hsin; Su, Yan-Kuin; Chen, Jenn-Fang
國立成功大學 2011-11 Improved Performance of InGaN/GaN Light-Emitting Diodes With Thin Intermediate Barriers Chen, Bo-Chun; Chang, Chun-Yen; Fu, Yi-Keng; Huang, Kai-Feng; Lu, Yu-Hsuan; Su, Yan-Kuin
國立成功大學 2011-10 Study of InGaN-Based Light-Emitting Diodes on a Roughened Backside GaN Substrate by a Chemical Wet-Etching Process Fu, Yi-Keng; Chen, Bo-Chun; Fang, Yen-Hsiang; Jiang, Ren-Hao; Lu, Yu-Hsuan; Xuan, Rong; Huang, Kai-Feng; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jebb-Fang; Chang, Chun-Yen
國立成功大學 2011-08 Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang
國立成功大學 2011-03-21 The effect of trimethylgallium flows in the AIInGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy Fu, Yi-Keng; Jiang, Ren-Hao; Lu, Yu-Hsuan; Chen, Bo-Chun; Xuan, Rong; Fang, Yen-Hsiang; Lin, Chia-Feng; Su, Yan-Kuin; Chen, Jenn-Fang
國立成功大學 2008-08 Four-Wavelengths-Mixed White Light Emitting Diodes with Dual-Wavelength-Pumped Green and Red Phosphors Lai, Wei-Chihh; Sheu, Jinn-Kong; Fu, Yi-Keng; Kuo, Cheng-Huang; Kuo, Chi-Wen; Tun, Chun-Ju; Pan, Ching-Jen; Chi, Gou-Chung

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