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Showing items 1-8 of 8 (1 Page(s) Totally)
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| 國立交通大學 |
2020-10-05T02:01:27Z |
Self-organized Pairs of Ge Double Quantum Dots with Tunable Sizes and Spacings Enable Room-Temperature Operation of Qubit and Single-Electron Devices
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Peng, Kang-Ping; Chen, Ching-Lun; Tang, Ying-Tsan; Kuo, David; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-10-05T01:59:51Z |
Coordinated and Simultaneous Formation of Paired Ge Quantum Dots by Thermal Oxidation of Designer Poly-SiGe Spacer Structures
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Chen, Han-Yu; Peng, Kang-Ping; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-07-01T05:21:20Z |
Nitride-stressor and quantum-size engineering in Ge quantum-dot photoluminescence wavelength and exciton lifetime
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Kuo, Yu-Hong; Chiu, Shih-Hsuan; Tien, Che-Wei; Lin, Sheng-Di; Chang, Wen-Hao; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2020-01-02T00:03:29Z |
Feasibility of Ge double quantum dots with high symmetry and tunability in size and inter-dot spacing
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Peng, Kang-Ping; Huang, Tsung-Lin; George, Thomas; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2019-04-03T06:38:34Z |
A Unique Approach to Generate Self-Aligned SiO2/Ge/SiO2/SiGe Gate-Stacking Heterostructures in a Single Fabrication Step
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Lai, Wei-Ting; Yang, Kuo-Ching; Hsu, Ting-Chia; Liao, Po-Hsiang; George, Thomas; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T05:58:41Z |
Self-Organized Ge Nanospherical Gate/SiO2/Si0.15Ge0.85-Nanosheet n-FETs Featuring High ON-OFF Drain Current Ratio
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Liao, Po-Hsiang; Peng, Kang-Ping; Lin, Horng-Chih; George, Thomas; Li, Pei-Wen |
| 國立交通大學 |
2019-04-02T05:57:55Z |
The Germanium "Halo": Visualizing Ge interstitial dynamics in nanocrystallite formation
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George, Thomas; Huang, Tsung-Lin; Hsueh, Chui-Yu; Peng, Kang-Ping; Lin, Horng-Chih; Li, Pei-Wen |
| 國立交通大學 |
2017-04-21T06:49:45Z |
Gate-stack engineering for self-aligned Ge-gate/SiO2/SiGe-channel Insta-MOS devices
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Lai, Wei-Ting; Yang, Kuo-Ching; Liao, Po-Hsiang; George, Thomas; Li, Pei-Wen |
Showing items 1-8 of 8 (1 Page(s) Totally)
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