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Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
臺大學術典藏 |
2018-09-10T07:01:22Z |
Demonstration of GaN MIS diodes by using AlN and Ga 2 O 3 (Gd 2 O 3) as dielectrics
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Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Marcus, MA; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG |
臺大學術典藏 |
2018-09-10T06:28:18Z |
Dielectrics for GaN based MIS-diodes
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Ren, F; Abernathy, CR; MacKenzie, JD; Gila, BP; Pearton, SJ; Hong, M; Macos, M; Schurman, MJ; Baca, AG; Shul, RJ; MINGHWEI HONG |
臺大學術典藏 |
2018-09-10T03:28:34Z |
A comparison of gallium gadolinium oxide and gadolinium oxide for use as dielectrics in GaN MOSFETs
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Gila, BP; Lee, KN; Johnson, W; Ren, F; Abernathy, CR; Pearton, SJ; Hong, M; Kwo, J; Mannaerts, JP; Anselm, KA; MINGHWEI HONG |
Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
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