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Taiwan Academic Institutional Repository >
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"gossmann hjl"
Showing items 1-3 of 3 (1 Page(s) Totally)
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| 臺大學術典藏 |
2018-09-10T04:52:00Z |
Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition
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Ye, PD; Wilk, GD; Yang, B; Kwo, J; Gossmann, HJL; Hong, M; Ng, KK; Bude, J; MINGHWEI HONG |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
| 臺大學術典藏 |
2018-09-10T04:31:35Z |
GaAs metal-oxide-semiconductor field-effect transistor with nanometer-thin dielectric grown by atomic layer deposition
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MINGHWEI HONG; Mannaerts, JP; Hong, M; Ng, KK; others; Ye, PD;Wilk, GD;Yang, B;Kwo, J;Chu, SNG;Nakahara, S;Gossmann, HJL;Mannaerts, JP;Hong, M;Ng, KK;others; Ye, PD; Wilk, GD; Yang, B; Kwo, J; Chu, SNG; Nakahara, S; Gossmann, HJL |
Showing items 1-3 of 3 (1 Page(s) Totally)
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