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| 國立交通大學 |
2018-08-21T05:56:38Z |
New Observations on the Regular and Irregular Noise Behavior in a Resistance Random Access Memory
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Chen, Scott C. H.; Huang, Y. J.; Chung, S. S.; Lee, H. Y.; Chen, Y. S.; Chen, F. T.; Gu, P. Y.; Tsai, M. -J. |
| 國立交通大學 |
2017-04-21T06:49:39Z |
Highly Scalable Hafnium Oxide Memory with Improvements of Resistive Distribution and Read Disturb Immunity
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Chen, Y. S.; Lee, H. Y.; Chen, P. S.; Gu, P. Y.; Chen, C. W.; Lin, W. P.; Liu, W. H.; Hsu, Y. Y.; Sheu, S. S.; Chiang, P. C.; Chen, W. S.; Chen, F. T.; Lien, C. H.; Tsai, M. -J. |
| 國立交通大學 |
2014-12-08T15:32:12Z |
The Physical Insights Into an Abnormal Erratic Behavior in the Resistance Random Access Memory
|
Huang, Y. J.; Chung, Steve S.; Lee, H. Y.; Chen, Y. S.; Chen, F. T.; Gu, P. Y.; Tsai, M. -J. |
Showing items 1-3 of 3 (1 Page(s) Totally)
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