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Showing items 1-9 of 9 (1 Page(s) Totally)
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| 臺大學術典藏 |
2021-09-02T00:03:58Z |
Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
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Lee M.H;Chen P.-G;Fan S.-T;Kuo C.-Y;Chen H.-H;Gu S.-S;Chou Y.-C;Tang C.-H;Hong R.-C;Wang Z.-Y;Liao M.-H;Li K.-S;Chen M.-C;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-09-02T00:03:52Z |
Ferroelectric Al:HfO2 negative capacitance FETs
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Lee M.H;Chen P.-G;Fan S.-T;Chou Y.-C;Kuo C.-Y;Tang C.-H;Chen H.-H;Gu S.-S;Hong R.-C;Wang Z.-Y;Chen S.-Y;Liao C.-Y;Chen K.-T;Chang S.T;Liao M.-H;Li K.-S;Liu C.W.; Lee M.H; CHEE-WEE LIU et al. |
| 臺大學術典藏 |
2021-08-05T02:37:33Z |
Negative capacitance FETs with steep switching by ferroelectric Hf-based oxide
|
Lee M.H;Chen P.-G;Fan S.-T;Kuo C.-Y;Chen H.-H;Gu S.-S;Chou Y.-C;Tang C.-H;Hong R.-C;Wang Z.-Y;Liao M.-H;Li K.-S;Chen M.-C;Liu C.W.; Lee M.H; MING-HAN LIAO et al. |
| 臺大學術典藏 |
2019-03-11T08:01:18Z |
Steep switch-off of In 0.18 Al 0.82 N/AlN/GaN on Si MIS-HEMT
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Lee, M.H.;Tang, M.,;Liao, C.-Y.;Chen, S.-Y.;Wang, Z.-Y.;Hong, R.-C.;Gu, S.-S.;Chou, Y.-C.;Chen, P.-G.;Liao, M.-H.; Chen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H.; Lee, M.H. |
| 臺大學術典藏 |
2019-03-11T08:01:18Z |
Steep switch-off of In 0.18 Al 0.82 N/AlN/GaN on Si MIS-HEMT
|
Lee, M.H.;Tang, M.,;Liao, C.-Y.;Chen, S.-Y.;Wang, Z.-Y.;Hong, R.-C.;Gu, S.-S.;Chou, Y.-C.;Chen, P.-G.;Liao, M.-H.; Chen, P.-G.; Chou, Y.-C.; Gu, S.-S.; Hong, R.-C.; Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Tang, M.,; Liao, M.-H.; Lee, M.H. |
| 臺大學術典藏 |
2019-03-11T08:01:18Z |
Ferroelectric Characteristics of Ultra-thin Hf 1-x Zr x O 2 Gate Stack and 1T Memory Operation Applications
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Li, K.-S.;Chen, P.-G.;Chen, S.-Y.;Wang, Z.-Y.;Chou, Y.-C.;Gu, S.-S.;Hong, R.-C.;Liao, C.-Y.;Chen, H.-H.;Tang, C.-H.;Kuo, C.Y.;Lee, M.H.;Liao, M.-H.; Lee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H.; Li, K.-S. |
| 臺大學術典藏 |
2019-03-11T08:01:18Z |
Ferroelectric Characteristics of Ultra-thin Hf 1-x Zr x O 2 Gate Stack and 1T Memory Operation Applications
|
Li, K.-S.;Chen, P.-G.;Chen, S.-Y.;Wang, Z.-Y.;Chou, Y.-C.;Gu, S.-S.;Hong, R.-C.;Liao, C.-Y.;Chen, H.-H.;Tang, C.-H.;Kuo, C.Y.;Lee, M.H.;Liao, M.-H.; Lee, M.H.; Kuo, C.Y.; Tang, C.-H.; Chen, H.-H.; Liao, C.-Y.; Hong, R.-C.; Gu, S.-S.; Chou, Y.-C.; Wang, Z.-Y.; Chen, S.-Y.; Chen, P.-G.; Liao, M.-H.; Li, K.-S. |
| 臺大學術典藏 |
2019-03-11T08:01:17Z |
Ferroelectric Al:HfO 2 negative capacitance FETs
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Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H.; Li, K.-S.; Liu, C.W.; Liu, C.W.;Li, K.-S.;Chang, S.T.;Chen, K.-T.;Liao, C.-Y.;Chen, S.-Y.;Wang, Z.-Y.;Hong, R.-C.;Gu, S.-S.;Chen, H.-H.;Tang, C.-H.;Kuo, C.-Y.;Chou, Y.-C.;Fan, S.-T.;Chen, P.-G.;Lee, M.H.;Liao, M.-H.; Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C. |
| 臺大學術典藏 |
2019-03-11T08:01:17Z |
Ferroelectric Al:HfO 2 negative capacitance FETs
|
Wang, Z.-Y.; Chen, S.-Y.; Liao, C.-Y.; Chen, K.-T.; Chang, S.T.; Liao, M.-H.; Li, K.-S.; Liu, C.W.; Liu, C.W.;Li, K.-S.;Chang, S.T.;Chen, K.-T.;Liao, C.-Y.;Chen, S.-Y.;Wang, Z.-Y.;Hong, R.-C.;Gu, S.-S.;Chen, H.-H.;Tang, C.-H.;Kuo, C.-Y.;Chou, Y.-C.;Fan, S.-T.;Chen, P.-G.;Lee, M.H.;Liao, M.-H.; Lee, M.H.; Chen, P.-G.; Fan, S.-T.; Chou, Y.-C.; Kuo, C.-Y.; Tang, C.-H.; Chen, H.-H.; Gu, S.-S.; Hong, R.-C. |
Showing items 1-9 of 9 (1 Page(s) Totally)
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