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Showing items 1-5 of 5 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:41:09Z |
Substrate bias dependence of breakdown progression in ultrathin oxide pMOSFETs
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Tsai, CW; Chen, MC; Gu, SH; Wang, T |
| 國立交通大學 |
2014-12-08T15:26:57Z |
Valence-band tunneling enhanced hot carrier degradation in ultra-thin oxide nMOSFETs
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Tsai, CW; Gu, SH; Chiang, LP; Wang, TH; Liu, YC; Huang, LS; Wang, MC; Hsia, LC |
| 國立交通大學 |
2014-12-08T15:26:38Z |
Soft breakdown enhanced hysteresis effects in ultra-thin oxide SOI nMOSFETs
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Chen, MC; Tsai, CW; Gu, SH; Wang, TH |
| 國立交通大學 |
2014-12-08T15:25:47Z |
Investigation of programmed charge lateral spread in a two-bit storage nitride flash memory cell by using a charge pumping technique
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Gu, SH; Wang, MT; Chan, CT; Zous, NK; Yeh, CC; Tsai, WJ; Lu, TC; Wang, TH; Ku, J; Lu, CY |
| 國立交通大學 |
2014-12-08T15:17:37Z |
Characterization of programmed charge lateral distribution in a two-bit storage nitride flash memory cell by using a charge-pumping technique
|
Gu, SH; Wang, TH; Lu, WP; Ting, WC; Ku, YHJ; Lu, CY |
Showing items 1-5 of 5 (1 Page(s) Totally)
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