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Showing items 1-10 of 23  (3 Page(s) Totally)
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Institution Date Title Author
國立交通大學 2019-04-02T06:00:00Z Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC
國立交通大學 2019-04-02T05:59:32Z Growth and characterizations of GaN on SiC substrates with buffer layers Lin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY
國立交通大學 2019-04-02T05:59:26Z STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY
國立交通大學 2019-04-02T05:59:14Z EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY LEE, WI; HUANG, TC; GUO, JD; FENG, MS
國立交通大學 2019-04-02T05:58:30Z Reactive ion etching of GaN with BCl3/SF6 plasmas Feng, MS; Guo, JD; Lu, YM; Chang, EY
國立交通大學 2014-12-08T15:47:36Z Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition Lai, WC; Chang, CY; Yokoyama, M; Guo, JD; Tsang, JS; Chan, SH; Bow, JS; Wei, SC; Hong, RH; Sze, SM
國立交通大學 2014-12-08T15:46:22Z Electrical properties of multiple high-dose Si implantation in p-GaN Lai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; Chang, CY
國立交通大學 2014-12-08T15:46:06Z Electrical properties of the Si implantation in Mg doped p-GaN Lai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH
國立交通大學 2014-12-08T15:27:44Z Study of Schottky barriers on n-type GaN grown by LP-MOCVD Guo, JD; Feng, MS; Pan, FM
國立交通大學 2014-12-08T15:27:08Z Study of a common deep level in GaN Wen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS

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