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Showing items 1-10 of 23 (3 Page(s) Totally)
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| 國立交通大學 |
2019-04-02T06:00:00Z |
Mobility enhancements in AlGaN/GaN/SiC with stair-step and graded heterostructures
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Lin, CF; Cheng, HC; Huang, JA; Feng, MS; Guo, JD; Chi, GC |
| 國立交通大學 |
2019-04-02T05:59:32Z |
Growth and characterizations of GaN on SiC substrates with buffer layers
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Lin, CF; Cheng, HC; Chi, GC; Feng, MS; Guo, JD; Hong, JMH; Chen, CY |
| 國立交通大學 |
2019-04-02T05:59:26Z |
STUDY OF SCHOTTKY BARRIERS ON N-TYPE GAN GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION
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GUO, JD; FENG, MS; GUO, RJ; PAN, FM; CHANG, CY |
| 國立交通大學 |
2019-04-02T05:59:14Z |
EFFECTS OF COLUMN-III ALKYL SOURCES ON DEEP LEVELS IN GAN GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY
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LEE, WI; HUANG, TC; GUO, JD; FENG, MS |
| 國立交通大學 |
2019-04-02T05:58:30Z |
Reactive ion etching of GaN with BCl3/SF6 plasmas
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Feng, MS; Guo, JD; Lu, YM; Chang, EY |
| 國立交通大學 |
2014-12-08T15:47:36Z |
Epitaxial growth of the GaN film by remote-plasma metalorganic chemical vapor deposition
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Lai, WC; Chang, CY; Yokoyama, M; Guo, JD; Tsang, JS; Chan, SH; Bow, JS; Wei, SC; Hong, RH; Sze, SM |
| 國立交通大學 |
2014-12-08T15:46:22Z |
Electrical properties of multiple high-dose Si implantation in p-GaN
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Lai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH; Chang, CY |
| 國立交通大學 |
2014-12-08T15:46:06Z |
Electrical properties of the Si implantation in Mg doped p-GaN
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Lai, WC; Yokoyama, M; Tsai, CC; Chang, CS; Guo, JD; Tsang, JS; Chan, SH |
| 國立交通大學 |
2014-12-08T15:27:44Z |
Study of Schottky barriers on n-type GaN grown by LP-MOCVD
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Guo, JD; Feng, MS; Pan, FM |
| 國立交通大學 |
2014-12-08T15:27:08Z |
Study of a common deep level in GaN
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Wen, TC; Lee, SC; Lee, WI; Guo, JD; Feng, MS |
Showing items 1-10 of 23 (3 Page(s) Totally)
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