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教育部委託研究計畫      計畫執行:國立臺灣大學圖書館
 
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機構 日期 題名 作者
國立交通大學 2014-12-08T15:24:43Z Flicker Noise in Nanoscale pMOSFETs with Mobility Enhancement Engineering and Dynamic Body Biases Yeh, Kuo-Liang; Ku, Chih-You; Hong, Wei-Lun; Guo, Jyh-Chyurn
國立交通大學 2014-12-08T15:21:35Z Low Frequency Noise in Nanoscale pMOSFETs with Strain Induced Mobility Enhancement and Dynamic Body Biases Yeh, Kuo-Liang; Ku, Chih-You; Hong, Wei-Lun; Guo, Jyh-Chyurn
國立交通大學 2014-12-08T15:16:10Z Low-K/Cu CMOS-based SoC technology with 115-GHz f(T), 100-GHz f(max), noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor Guo, Jyh-Chyurn
國立交通大學 2014-12-08T15:15:32Z A new lossy substrate model for accurate RF CMOS noise extraction and simulation with frequency and bias dependence Guo, Jyh-Chyurn; Lin, Yi-Min
國立交通大學 2014-12-08T15:13:37Z A broadband and scalable lumped element model for fully symmetric inductors under single-ended and differentially driven operations Guo, Jyh-Chyurn; Tan, Teng-Yang
國立交通大學 2014-12-08T15:13:09Z A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities Guo, Jyh-Chyurn; Tan, Teng-Yang
國立交通大學 2014-12-08T15:11:05Z A simple analytical model to accurately predict self-resonance frequencies of on-silicon-chip inductors in TEM mode and eddy current mode Guo, Jyh-Chyurn; Tan, Teng-Yang
國立交通大學 2014-12-08T15:10:58Z A compact RF CMOS modeling for accurate high-frequency noise simulation in sub-100-nm MOSFETs Guo, Jyh-Chyurn; Lin, Yi-Min
國立交通大學 2014-12-08T15:10:02Z A Broadband and Scalable Lossy Substrate Model for RF Noise Simulation and Analysis in Nanoscale MOSFETs With Various Pad Structures Guo, Jyh-Chyurn; Tsai, Yi-Hsiu
國立交通大學 2014-12-08T15:09:00Z A New Three-Dimensional Capacitor Model for Accurate Simulation of Parasitic Capacitances in Nanoscale MOSFETs Guo, Jyh-Chyurn; Yeh, Chih-Ting
國立交通大學 2014-12-08T15:03:41Z RF Noise Shielding Method and Modelling for Nanoscale MOSFET Guo, Jyh-Chyurn; Lin, Yi-Min; Tsai, Yi-Hsiu

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