| 國立交通大學 |
2014-12-12T01:37:25Z |
四埠射頻金氧半電晶體與共用源汲極主動區之新型串疊結構的小訊號等效電路模型
|
邱德昌; Chiu, De-Chang; 郭治群; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-12T01:37:15Z |
奈米金氧半電晶體佈局對高頻特性與雜訊之影響以及低功耗超寬頻低雜訊放大器之設計應用
|
張智翔; Chang, Chih-Shiang; 郭治群; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-12T01:27:23Z |
低功耗壓控振盪器設計與順向基極偏壓之應用
|
賴奕岑; Lai, Yi-Cen; 郭治群; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-12T01:27:11Z |
低功耗與超寬頻射頻CMOS混頻器設計與分析
|
劉盈志; Liu,Ying-Chih; 郭治群; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-12T01:27:08Z |
利用順向基極偏壓設計之低功耗低雜訊放大器
|
黃俊榮; Huang, Jun-Rong; 郭治群; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-12T01:27:04Z |
基板雜訊隔離結構設計與分析以應用於射頻與類比電路
|
陳敬文; Chen, Jing-Wen; 郭治群; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-12T01:27:03Z |
射頻金氧半場效電晶體元件佈局對高頻特性與低頻雜訊之影響以應用於射頻與類比電路
|
古智友; Ku, Chih-You; 郭治群; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:48:37Z |
The Impact of Uni-axial Strain on Low Frequency Noise in Nanoscale p-Channel Metal-Oxide-Semiconductor Field Effect Transistors under Dynamic Body Biases
|
Yeh, Kuo-Liang; Ku, Chih-You; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:47:55Z |
The Impact of Layout-Dependent STI Stress and Effective Width on Low-Frequency Noise and High-Frequency Performance in Nanoscale nMOSFETs
|
Yeh, Kuo-Liang; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:39:09Z |
The Impact of MOSFET Layout Dependent Stress on High Frequency Characteristics and Flicker Noise
|
Yeh, Kuo-Liang; Ku, Chih-You; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:39:00Z |
The Impact of Uniaxial Strain on Low Frequency Noise of Nanoscale PMOSFETs with e-SiGe and i-SiGe Source/Drain
|
Yeh, Kuo-Liang; Hong, Wei-Lun; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:30:30Z |
Narrow-Width Effect on High-Frequency Performance and RF Noise of Sub-40-nm Multifinger nMOSFETs and pMOSFETs
|
Yeh, Kuo-Liang; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:27:35Z |
Layout-Dependent Stress Effect on High-Frequency Characteristics and Flicker Noise in Multifinger and Donut MOSFETs
|
Yeh, Kuo-Liang; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:27:34Z |
A New Method for Layout-Dependent Parasitic Capacitance Analysis and Effective Mobility Extraction in Nanoscale Multifinger MOSFETs
|
Yeh, Kuo-Liang; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:25:08Z |
P-channel SONOS transient current modeling for program and erase
|
Du, Pei-Ying; Guo, Jyh-Chyurn; Lee, H. M.; Chen, H. M.; Shen, Rick; Hsu, C. C. -H. |
| 國立交通大學 |
2014-12-08T15:24:43Z |
Flicker Noise in Nanoscale pMOSFETs with Mobility Enhancement Engineering and Dynamic Body Biases
|
Yeh, Kuo-Liang; Ku, Chih-You; Hong, Wei-Lun; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:21:35Z |
Low Frequency Noise in Nanoscale pMOSFETs with Strain Induced Mobility Enhancement and Dynamic Body Biases
|
Yeh, Kuo-Liang; Ku, Chih-You; Hong, Wei-Lun; Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:16:10Z |
Low-K/Cu CMOS-based SoC technology with 115-GHz f(T), 100-GHz f(max), noise 80-nm RF CMOS, high-Q MiM capacitor, and spiral Cu inductor
|
Guo, Jyh-Chyurn |
| 國立交通大學 |
2014-12-08T15:15:32Z |
A new lossy substrate model for accurate RF CMOS noise extraction and simulation with frequency and bias dependence
|
Guo, Jyh-Chyurn; Lin, Yi-Min |
| 國立交通大學 |
2014-12-08T15:13:37Z |
A broadband and scalable lumped element model for fully symmetric inductors under single-ended and differentially driven operations
|
Guo, Jyh-Chyurn; Tan, Teng-Yang |
| 國立交通大學 |
2014-12-08T15:13:09Z |
A broadband and scalable on-chip inductor model appropriate for operation modes of varying substrate resistivities
|
Guo, Jyh-Chyurn; Tan, Teng-Yang |
| 國立交通大學 |
2014-12-08T15:11:05Z |
A simple analytical model to accurately predict self-resonance frequencies of on-silicon-chip inductors in TEM mode and eddy current mode
|
Guo, Jyh-Chyurn; Tan, Teng-Yang |
| 國立交通大學 |
2014-12-08T15:10:58Z |
A compact RF CMOS modeling for accurate high-frequency noise simulation in sub-100-nm MOSFETs
|
Guo, Jyh-Chyurn; Lin, Yi-Min |
| 國立交通大學 |
2014-12-08T15:10:02Z |
A Broadband and Scalable Lossy Substrate Model for RF Noise Simulation and Analysis in Nanoscale MOSFETs With Various Pad Structures
|
Guo, Jyh-Chyurn; Tsai, Yi-Hsiu |
| 國立交通大學 |
2014-12-08T15:09:00Z |
A New Three-Dimensional Capacitor Model for Accurate Simulation of Parasitic Capacitances in Nanoscale MOSFETs
|
Guo, Jyh-Chyurn; Yeh, Chih-Ting |
