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| 國立交通大學 |
2017-04-21T06:49:08Z |
Self-separated freestanding GaN grown on patterned substrate by hydride vapor phase epitaxy
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Lai, Chih-Ming; Liu, Wen Yu; Tsay, Jenq-Dar; Liu, Po Chun; Guo, Yih-Der; Huang, Hsin-Hsiung; Chang, Yu Hsiang; Yeh, Jul Chin |
| 國立交通大學 |
2014-12-08T15:32:06Z |
Reduction of Efficiency Droop in InGaN Light-Emitting Diode Grown on Self-Separated Freestanding GaN Substrates
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Chao, Chu-Li; Xuan, Rong; Yen, Hsi-Hsuan; Chiu, Ching-Hsueh; Fang, Yen-Hsiang; Li, Zhen-Yu; Chen, Bo-Chun; Lin, Chien-Chung; Chiu, Ching-Hua; Guo, Yih-Der; Kuo, Hao-Chung; Chen, Jenn-Fang; Cheng, Shun-Jen |
| 國立成功大學 |
2004-11 |
Influence of growth temperature on surface morphologies of GaN crystals grown on dot-patterned substrate by hydride vapor phase epitaxy
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Liu, Hai-Ping; Chen, In-Gann; Tsay, Jenq-Dar; Liu, Wen-Yueh; Guo, Yih-Der; Hsu, Jung-Tsung |
| 國立成功大學 |
2003-01-02 |
The growth mechanism of GaN grown by hydride vapor phase epitaxy in N-2 and H-2 carrier gas
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Liu, Hai-Ping; Tsay, Jenq-Dar; Liu, Wen-Yueh; Guo, Yih-Der; Hsu, Jung Tsung; Chen, In-Gann |
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