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Institution Date Title Author
臺大學術典藏 2019-03-11T08:02:18Z The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel. C.-C. Lee;H.-W. Hsuh;M. H.Liao; M. H.Liao; H.-W. Hsuh; C.-C. Lee
臺大學術典藏 2019-03-11T08:02:18Z The effect of CESL and dummy poly gate for n-type MOSFETs with short Si0.75Ge0.25 channel. C.-C. Lee;H.-W. Hsuh;M. H.Liao; M. H.Liao; H.-W. Hsuh; C.-C. Lee

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