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| 國立交通大學 |
2019-06-03T01:09:17Z |
First Experimental Demonstration of Negative Capacitance InGaAs MOSFETs With Hf0.5Zr0.5O2 Ferroelectric Gate Stack
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Luc, Q. H.; Fan-Chiang, C. C.; Huynh, S. H.; Huang, P.; Do, H. B.; Ha, M. T. H.; Jin, Y. D.; Nguyen, T. A.; Zhang, K. Y.; Wang, H. C.; Lin, Y. K.; Lin, Y. C.; Hu, C.; Iwai, H.; Chang, E. Y. |
| 國立成功大學 |
2017 |
Performance improvement of highly mismatched GaSb layers on GaAs by interfacial-treatment-assisted chemical vapor deposition
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Hsiao, C.-J.;Ha, M.-T.-H.;Liu, C.-K.;Nguyen, H.-Q.;Yu, H.-W.;Chang, S.-P.;Wong, Y.-Y.;Maa, J.-S.;Chang, S.-J.;Chang, E.Y. |
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