| 國立交通大學 |
2019-04-02T06:04:19Z |
The Growth and Fabrication of High-Performance In0.5Ga0.5As Metal-Oxide-Semiconductor Capacitor on GaAs Substrate by Metalorganic Chemical Vapor Deposition Method.
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Hong Quan Nguyen; Hai Dang Trinh; Yu, Hung Wei; Hsu, Ching Hsiang; Chung, Chen Chen; Binh Tinh Tran; Wong, Yuen Yee; Thanh Hoa Phan Van; Quang Ho Luc; Chiou, Diao Yuan; Chi Lang Nguyen; Dee, Chang Fu; Chang, Edward Yi |
| 國立交通大學 |
2019-04-02T06:04:18Z |
Influence of post deposition annealing temperatures on electrical properties of Al2O3/InSb MOSCAPs
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Hai-Dang Trinh; Lin, Yue-Chin; Chang, Edward Yi; Hong-Quan Nguyen; Wang, Shin-Yuan; Wong, Yuen-Yee; Binh-Tinh Tran; Quang-Ho Luc; Chi-Lang Nguyen; Dee, Chang-Fu |
| 國立交通大學 |
2019-04-02T05:57:55Z |
Growth of High-Quality In0.4Ga0.6N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
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Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh |
| 國立交通大學 |
2014-12-08T15:36:59Z |
Electrical Characteristics of n, p-In0.53Ga0.47As MOSCAPs With In Situ PEALD-AlN Interfacial Passivation Layer
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Quang Ho Luc; Chang, Edward Yi; Hai Dang Trinh; Lin, Yueh Chin; Hong Quan Nguyen; Wong, Yuen Yee; Huy Binh Do; Salahuddin, Sayeef; Hu, Chenming Calvin |
| 國立交通大學 |
2014-12-08T15:36:13Z |
Characterizations of GaN Films Grown on Si (111) Substrates with Various Growth Temperatures of Multiple AlN Buffer Layers
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Binh-Tinh Tran; Chang, Edward Yi; Lin, Kung-Liang; Luong, Tien-Tung; Yu, Hung-Wei; Huang, Man-Chi; Chung, Chen-Chen; Hai-Dang Trinh; Hong-Quan Nguyen; Chi-Lang Nguyen; Quang-Ho Luc |
| 國立交通大學 |
2014-12-08T15:35:18Z |
Studying of InSb MOS Capacitors for Post CMOS Application
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Chang, Edward Yi; Hai-Dang Trinh; Lin, Yueh-Chin |
| 國立交通大學 |
2014-12-08T15:33:16Z |
The integration of Ge and III-V materials on GaAs and Si for Post CMOS applications
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Chang, Edward Yi; Chang, Chia Hua; Tang, Shih Hsuan; Hai Dang Trinh; Kuo, Chien I.; Hsu, Ching Yi; Su, Yung Hsuan |
| 國立交通大學 |
2014-12-08T15:33:03Z |
Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density
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Hai-Dang Trinh; Lin, Yueh-Chin; Minh-Thuy Nguyen; Hong-Quan Nguyen; Quoc-Van Duong; Quang-Ho Luc; Wang, Shin-Yuan; Manh-Nghia Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:31:26Z |
Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
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Hai Dang Trinh; Minh Thuy Nguyen; Lin, Yueh Chin; Quoc Van Duong; Hong Quan Nguyen; Chang, Edward Yi |
| 國立交通大學 |
2014-12-08T15:30:40Z |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
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Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 國立交通大學 |
2014-12-08T15:28:03Z |
C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
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Tang, Shih Hsuan; Kuo, Chien I.; Hai Dang Trinh; Hudait, Mantu; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Hong Quan Nguyen |
| 國立交通大學 |
2014-12-08T15:23:15Z |
Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
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Hong-Quan Nguyen; Chang, Edward Yi; Yu, Hung-Wei; Hai-Dang Trinh; Dee, Chang-Fu; Wong, Yuen-Yee; Hsu, Ching-Hsiang; Binh-Tinh Tran; Chung, Chen-Chen |
| 國立交通大學 |
2014-12-08T15:21:13Z |
Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
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Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh |
| 國立成功大學 |
2013-05 |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
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Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 元智大學 |
2009-10 |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric
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許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
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許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
