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Showing items 11-19 of 19 (1 Page(s) Totally)
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| 國立交通大學 |
2014-12-08T15:28:03Z |
C-V characteristics of epitaxial germanium metal-oxide-semiconductor capacitor on GaAs substrate with ALD Al2O3 dielectric
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Tang, Shih Hsuan; Kuo, Chien I.; Hai Dang Trinh; Hudait, Mantu; Chang, Edward Yi; Hsu, Ching Yi; Su, Yung Hsuan; Luo, Guang-Li; Hong Quan Nguyen |
| 國立交通大學 |
2014-12-08T15:23:15Z |
Threading Dislocation Blocking in Metamorphic InGaAs/GaAs for Growing High-Quality In0.5Ga0.5As and In0.3Ga0.7As on GaAs Substrate by Using Metal Organic Chemical Vapor Deposition
|
Hong-Quan Nguyen; Chang, Edward Yi; Yu, Hung-Wei; Hai-Dang Trinh; Dee, Chang-Fu; Wong, Yuen-Yee; Hsu, Ching-Hsiang; Binh-Tinh Tran; Chung, Chen-Chen |
| 國立交通大學 |
2014-12-08T15:21:13Z |
Growth of High-Quality In(0.4)Ga(0.6)N Film on Si Substrate by Metal Organic Chemical Vapor Deposition
|
Binh-Tinh Tran; Chang, Edward-Yi; Lin, Kung-Liang; Wong, Yuen-Yee; Sahoo, Kartika Chandra; Lin, Hsiao-Yu; Huang, Man-Chi; Hong-Quan Nguyen; Lee, Ching-Ting; Hai-Dang Trinh |
| 國立成功大學 |
2013-05 |
Electrical Characteristics of Al2O3/InSb MOSCAPs and the Effect of Postdeposition Annealing Temperatures
|
Hai Dang Trinh; Lin, Yueh Chin; Chang, Edward Yi; Lee, Ching-Ting; Wang, Shin-Yuan; Hong Quan Nguyen; Chiu, Yu Sheng; Quang Ho Luc; Chang, Hui-Chen; Lin, Chun-Hsiung; Jang, Simon; Diaz, Carlos H. |
| 元智大學 |
2009-10 |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric
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許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs-Channel Metal-Oxide-Semiconductor HEMTs with Atomic - Layer -Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
| 元智大學 |
2009-10 |
InAs - Channel Metal-Oxide-Semiconductor HEMTs with Atomic-Layer-Deposited Al2O3 Gate Dielectric
|
許恒通; Chia-Yuan Chang; Edward Yi Chang; Wei-Ching Huang; Yung-Hsuan Su; Hai-Dang Trinh; Yasuyuki Miyamoto |
Showing items 11-19 of 19 (1 Page(s) Totally)
1
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