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Institution Date Title Author
國立臺灣大學 1993 Feature Size Effects on Selective Area Epitaxy of InGaAs 王玉麟; Cotta, M. A.; Harriott, L. R.; Hamm, R. H.; Wade, H. H.; Weiner, J. S.; Ritter, D.; Temkin, H.; Wang, Yuh-Lin; Cotta, M. A.; Harriott, L. R.; Hamm, R. H.; Wade, H. H.; Weiner, J. S.; Ritter, D.; Temkin, H.
國立臺灣大學 1992 Selective Area Growth of Hetrostructure Bipolar Transistors by Metalorganic Molecular Beam Epitaxy 王玉麟; Hamm, R. H.; Feygenson, A.; Ritter, D.; Temkin, H.; Panish, M.; Wang, Yuh-Lin; Hamm, R. H.; Feygenson, A.; Ritter, D.; Temkin, H.; Panish, M.
國立臺灣大學 1991 Optical and Electrical Properties of InP/InGaAs Grown Selectively on Silicon dioxide-Masked InP 王玉麟; Feygenson, A.; Hamm, R. H.; Ritter, D.; Weiner, J. S.; Temkin, H.; Panish, M. B.; Wang, Yuh-Lin; Feygenson, A.; Hamm, R. H.; Ritter, D.; Weiner, J. S.; Temkin, H.; Panish, M. B.

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