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Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
國立臺灣大學 |
1993 |
Feature Size Effects on Selective Area Epitaxy of InGaAs
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王玉麟; Cotta, M. A.; Harriott, L. R.; Hamm, R. H.; Wade, H. H.; Weiner, J. S.; Ritter, D.; Temkin, H.; Wang, Yuh-Lin; Cotta, M. A.; Harriott, L. R.; Hamm, R. H.; Wade, H. H.; Weiner, J. S.; Ritter, D.; Temkin, H. |
國立臺灣大學 |
1992 |
Selective Area Growth of Hetrostructure Bipolar Transistors by Metalorganic Molecular Beam Epitaxy
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王玉麟; Hamm, R. H.; Feygenson, A.; Ritter, D.; Temkin, H.; Panish, M.; Wang, Yuh-Lin; Hamm, R. H.; Feygenson, A.; Ritter, D.; Temkin, H.; Panish, M. |
國立臺灣大學 |
1991 |
Optical and Electrical Properties of InP/InGaAs Grown Selectively on Silicon dioxide-Masked InP
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王玉麟; Feygenson, A.; Hamm, R. H.; Ritter, D.; Weiner, J. S.; Temkin, H.; Panish, M. B.; Wang, Yuh-Lin; Feygenson, A.; Hamm, R. H.; Ritter, D.; Weiner, J. S.; Temkin, H.; Panish, M. B. |
Showing items 1-3 of 3 (1 Page(s) Totally) 1 View [10|25|50] records per page
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