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Institution Date Title Author
國立交通大學 2014-12-08T15:13:32Z The impact of high-frequency characteristics induced by intrinsic parameter fluctuations in nano-MOSFET device and circuit Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong
國立交通大學 2014-12-08T15:13:07Z Statistical variability in FinFET devices with intrinsic parameter fluctuations Hwang, Chih-Hong; Li, Yiming; Han, Ming-Hung
國立交通大學 2014-12-08T15:07:40Z Discrete-Dopant-Induced Power-Delay Characteristic Fluctuation in 16 nm Complementary Metal-Oxide-Semiconductor with High Dielectric Constant Material Han, Ming-Hung; Li, Yiming; Hwang, Chih-Hong
國立交通大學 2014-12-08T15:07:27Z Process-Variation Effect, Metal-Gate Work-Function Fluctuation, and Random-Dopant Fluctuation in Emerging CMOS Technologies Li, Yiming; Hwang, Chih-Hong; Li, Tien-Yeh; Han, Ming-Hung
國立交通大學 2014-12-08T15:07:15Z Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations Li, Yiming; Hwang, Chih-Hong; Han, Ming-Hung

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